JPS5591116A - Method for growing crystal of chemical compound semiconductor - Google Patents
Method for growing crystal of chemical compound semiconductorInfo
- Publication number
- JPS5591116A JPS5591116A JP16477578A JP16477578A JPS5591116A JP S5591116 A JPS5591116 A JP S5591116A JP 16477578 A JP16477578 A JP 16477578A JP 16477578 A JP16477578 A JP 16477578A JP S5591116 A JPS5591116 A JP S5591116A
- Authority
- JP
- Japan
- Prior art keywords
- highly pure
- compound semiconductor
- chemical compound
- melted
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To accomplish a significant reduction of the refining time of melted liquid of source material for growth of chemical compound semiconductor crystal by introducing a highly pure hydrogen gas from above the melted liquid surface thereof.
CONSTITUTION: Preliminarily surface treated indium is held in a highly pure carbonic vessel 1 and set into a quartz tube 3 of a heating furnace 2. Then, the In source is heated and melted in the atmosphere of highly pure hydrogen gas within the quartz tube. After an In solution 10 is made, a highly pure hydrogen gas is injected onto the surface of the In solution. In this manner, the In metal is used in the form of a melted source liquid after the highly pure hydrogen treatment for the growth of chemical compound semiconductor crystal. This enables the quick and efficient refining of the source metal material.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16477578A JPS5591116A (en) | 1978-12-28 | 1978-12-28 | Method for growing crystal of chemical compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16477578A JPS5591116A (en) | 1978-12-28 | 1978-12-28 | Method for growing crystal of chemical compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5591116A true JPS5591116A (en) | 1980-07-10 |
JPS6112369B2 JPS6112369B2 (en) | 1986-04-08 |
Family
ID=15799694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16477578A Granted JPS5591116A (en) | 1978-12-28 | 1978-12-28 | Method for growing crystal of chemical compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5591116A (en) |
-
1978
- 1978-12-28 JP JP16477578A patent/JPS5591116A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6112369B2 (en) | 1986-04-08 |
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