JPS5591116A - Method for growing crystal of chemical compound semiconductor - Google Patents

Method for growing crystal of chemical compound semiconductor

Info

Publication number
JPS5591116A
JPS5591116A JP16477578A JP16477578A JPS5591116A JP S5591116 A JPS5591116 A JP S5591116A JP 16477578 A JP16477578 A JP 16477578A JP 16477578 A JP16477578 A JP 16477578A JP S5591116 A JPS5591116 A JP S5591116A
Authority
JP
Japan
Prior art keywords
highly pure
compound semiconductor
chemical compound
melted
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16477578A
Other languages
Japanese (ja)
Other versions
JPS6112369B2 (en
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16477578A priority Critical patent/JPS5591116A/en
Publication of JPS5591116A publication Critical patent/JPS5591116A/en
Publication of JPS6112369B2 publication Critical patent/JPS6112369B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To accomplish a significant reduction of the refining time of melted liquid of source material for growth of chemical compound semiconductor crystal by introducing a highly pure hydrogen gas from above the melted liquid surface thereof.
CONSTITUTION: Preliminarily surface treated indium is held in a highly pure carbonic vessel 1 and set into a quartz tube 3 of a heating furnace 2. Then, the In source is heated and melted in the atmosphere of highly pure hydrogen gas within the quartz tube. After an In solution 10 is made, a highly pure hydrogen gas is injected onto the surface of the In solution. In this manner, the In metal is used in the form of a melted source liquid after the highly pure hydrogen treatment for the growth of chemical compound semiconductor crystal. This enables the quick and efficient refining of the source metal material.
COPYRIGHT: (C)1980,JPO&Japio
JP16477578A 1978-12-28 1978-12-28 Method for growing crystal of chemical compound semiconductor Granted JPS5591116A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16477578A JPS5591116A (en) 1978-12-28 1978-12-28 Method for growing crystal of chemical compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16477578A JPS5591116A (en) 1978-12-28 1978-12-28 Method for growing crystal of chemical compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5591116A true JPS5591116A (en) 1980-07-10
JPS6112369B2 JPS6112369B2 (en) 1986-04-08

Family

ID=15799694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16477578A Granted JPS5591116A (en) 1978-12-28 1978-12-28 Method for growing crystal of chemical compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5591116A (en)

Also Published As

Publication number Publication date
JPS6112369B2 (en) 1986-04-08

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