JPS57170548A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS57170548A
JPS57170548A JP56056102A JP5610281A JPS57170548A JP S57170548 A JPS57170548 A JP S57170548A JP 56056102 A JP56056102 A JP 56056102A JP 5610281 A JP5610281 A JP 5610281A JP S57170548 A JPS57170548 A JP S57170548A
Authority
JP
Japan
Prior art keywords
holes
sio2
si3n4
etching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56056102A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217866B2 (enExample
Inventor
Hiroyuki Sakai
Tsutomu Fujita
Toyoki Takemoto
Kenji Kawakita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56056102A priority Critical patent/JPS57170548A/ja
Publication of JPS57170548A publication Critical patent/JPS57170548A/ja
Publication of JPS6217866B2 publication Critical patent/JPS6217866B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0124—
    • H10W10/13—

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
JP56056102A 1981-04-13 1981-04-13 Semiconductor device and manufacture thereof Granted JPS57170548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56056102A JPS57170548A (en) 1981-04-13 1981-04-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56056102A JPS57170548A (en) 1981-04-13 1981-04-13 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57170548A true JPS57170548A (en) 1982-10-20
JPS6217866B2 JPS6217866B2 (enExample) 1987-04-20

Family

ID=13017734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56056102A Granted JPS57170548A (en) 1981-04-13 1981-04-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57170548A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115344A (ja) * 1984-06-29 1986-01-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体構造体の形成方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231460U (enExample) * 1988-08-22 1990-02-27

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128298A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Selective oxidizing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54128298A (en) * 1978-03-29 1979-10-04 Hitachi Ltd Selective oxidizing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115344A (ja) * 1984-06-29 1986-01-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体構造体の形成方法

Also Published As

Publication number Publication date
JPS6217866B2 (enExample) 1987-04-20

Similar Documents

Publication Publication Date Title
JPS57170548A (en) Semiconductor device and manufacture thereof
JPS56103443A (en) Production of element isolation structure for semiconductor device
JPS57113248A (en) Manufacture of semiconductor device
JPS57204146A (en) Manufacture of semiconductor device
JPS5776865A (en) Manufacture of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS56103444A (en) Production of element isolation structure for semiconductor device
JPS5780733A (en) Manufacture of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS56125856A (en) Manufacture of semiconductor device
JPS5779641A (en) Manufacture of semiconductor device
JPS5780735A (en) Manufacture of semiconductor device
JPS56129698A (en) Crystal growing method
JPS56140642A (en) Manufacture of semiconductor device
JPS57199237A (en) Manufacture of semiconductor device
JPS57106048A (en) Manufacture of semiconductor device
JPS649639A (en) Manufacture of insulating film for element isolation of semiconductor device
JPS5710248A (en) Manufacture of semiconductor device
JPS5575221A (en) Manufacturing semiconductor
JPS57138162A (en) Manufacture of semiconductor device
JPS57202756A (en) Manufacture of semiconductor device
JPS56157047A (en) Manufacture of multilayer wiring in semiconductor device
JPS5723224A (en) Manufacture of semiconductor integrated circuit
JPS6468949A (en) Manufacture of semiconductor device
JPS5750453A (en) Multilayer wiring method of semiconductor device