JPS57164573A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57164573A
JPS57164573A JP57029027A JP2902782A JPS57164573A JP S57164573 A JPS57164573 A JP S57164573A JP 57029027 A JP57029027 A JP 57029027A JP 2902782 A JP2902782 A JP 2902782A JP S57164573 A JPS57164573 A JP S57164573A
Authority
JP
Japan
Prior art keywords
layer
impurity
semiconductor device
molecular beam
essentially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57029027A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330309B2 (enrdf_load_stackoverflow
Inventor
Juichi Shimada
Yasuhiro Shiraki
Keisuke Kobayashi
Yoshifumi Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57029027A priority Critical patent/JPS57164573A/ja
Publication of JPS57164573A publication Critical patent/JPS57164573A/ja
Publication of JPH0330309B2 publication Critical patent/JPH0330309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57029027A 1982-02-26 1982-02-26 Semiconductor device Granted JPS57164573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029027A JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029027A JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP966277A Division JPS5915388B2 (ja) 1977-02-02 1977-02-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS57164573A true JPS57164573A (en) 1982-10-09
JPH0330309B2 JPH0330309B2 (enrdf_load_stackoverflow) 1991-04-26

Family

ID=12264923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029027A Granted JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164573A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (ja) * 1983-06-24 1985-01-14 Nec Corp 超格子の構造
JPS6052067A (ja) * 1983-08-31 1985-03-23 Nec Corp 超格子の構造
JPS61216316A (ja) * 1985-02-22 1986-09-26 Fujitsu Ltd 半導体装置の製造方法
US4675711A (en) * 1984-12-18 1987-06-23 International Business Machines Corporation Low temperature tunneling transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (ja) * 1983-06-24 1985-01-14 Nec Corp 超格子の構造
JPS6052067A (ja) * 1983-08-31 1985-03-23 Nec Corp 超格子の構造
US4675711A (en) * 1984-12-18 1987-06-23 International Business Machines Corporation Low temperature tunneling transistor
JPS61216316A (ja) * 1985-02-22 1986-09-26 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0330309B2 (enrdf_load_stackoverflow) 1991-04-26

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