JPH0330309B2 - - Google Patents

Info

Publication number
JPH0330309B2
JPH0330309B2 JP57029027A JP2902782A JPH0330309B2 JP H0330309 B2 JPH0330309 B2 JP H0330309B2 JP 57029027 A JP57029027 A JP 57029027A JP 2902782 A JP2902782 A JP 2902782A JP H0330309 B2 JPH0330309 B2 JP H0330309B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
semiconductor
semiconductor device
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57029027A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57164573A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57029027A priority Critical patent/JPS57164573A/ja
Publication of JPS57164573A publication Critical patent/JPS57164573A/ja
Publication of JPH0330309B2 publication Critical patent/JPH0330309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57029027A 1982-02-26 1982-02-26 Semiconductor device Granted JPS57164573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57029027A JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57029027A JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP966277A Division JPS5915388B2 (ja) 1977-02-02 1977-02-02 半導体装置

Publications (2)

Publication Number Publication Date
JPS57164573A JPS57164573A (en) 1982-10-09
JPH0330309B2 true JPH0330309B2 (enrdf_load_stackoverflow) 1991-04-26

Family

ID=12264923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57029027A Granted JPS57164573A (en) 1982-02-26 1982-02-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57164573A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607121A (ja) * 1983-06-24 1985-01-14 Nec Corp 超格子の構造
JPS6052067A (ja) * 1983-08-31 1985-03-23 Nec Corp 超格子の構造
DE3477624D1 (en) * 1984-12-18 1989-05-11 Ibm Low temperature tunneling transistor
JPS61216316A (ja) * 1985-02-22 1986-09-26 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915388B2 (ja) * 1977-02-02 1984-04-09 株式会社日立製作所 半導体装置

Also Published As

Publication number Publication date
JPS57164573A (en) 1982-10-09

Similar Documents

Publication Publication Date Title
US5283456A (en) Vertical gate transistor with low temperature epitaxial channel
US3890632A (en) Stabilized semiconductor devices and method of making same
US8173495B2 (en) Semiconductor on insulator
US6320202B1 (en) Bottom-gated thin film transistors comprising germanium in a channel region
US5108935A (en) Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities
US6049091A (en) High electron mobility transistor
US4797721A (en) Radiation hardened semiconductor device and method of making the same
JPS5915388B2 (ja) 半導体装置
US4783688A (en) Schottky barrier field effect transistors
JPH0137857B2 (enrdf_load_stackoverflow)
JPS62271475A (ja) 半導体装置
JPH0330309B2 (enrdf_load_stackoverflow)
TW200414434A (en) Method for fabricating a transistor structure
JPH0614549B2 (ja) 薄膜トランジスタ
US20040178442A1 (en) Short channel insulated-gate static induction transistor and method om manufacturing the same
US5212100A (en) P-well CMOS process using neutron activated doped N-/N+ silicon substrates
JPH0444431B2 (enrdf_load_stackoverflow)
JPS5910278A (ja) 半導体装置
GB2074374A (en) Method of making field effect transistors
US5925915A (en) Semiconductor on insulator devices
JPS59188175A (ja) 半導体装置
US6046471A (en) Ultra shallow junction depth transistors
US5096840A (en) Method of making a polysilicon emitter bipolar transistor
JP2869653B2 (ja) 半導体装置およびその製造方法
JP2941984B2 (ja) 半導体装置