JPH0444431B2 - - Google Patents

Info

Publication number
JPH0444431B2
JPH0444431B2 JP59015157A JP1515784A JPH0444431B2 JP H0444431 B2 JPH0444431 B2 JP H0444431B2 JP 59015157 A JP59015157 A JP 59015157A JP 1515784 A JP1515784 A JP 1515784A JP H0444431 B2 JPH0444431 B2 JP H0444431B2
Authority
JP
Japan
Prior art keywords
semiconductor
semiconductor layer
semiconductor device
layer
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59015157A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59175774A (ja
Inventor
Juichi Shimada
Yasuhiro Shiraki
Keisuke Kobayashi
Yoshifumi Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59015157A priority Critical patent/JPS59175774A/ja
Publication of JPS59175774A publication Critical patent/JPS59175774A/ja
Publication of JPH0444431B2 publication Critical patent/JPH0444431B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP59015157A 1984-02-01 1984-02-01 半導体装置 Granted JPS59175774A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59015157A JPS59175774A (ja) 1984-02-01 1984-02-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59015157A JPS59175774A (ja) 1984-02-01 1984-02-01 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11273183A Division JPS5910278A (ja) 1983-06-24 1983-06-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS59175774A JPS59175774A (ja) 1984-10-04
JPH0444431B2 true JPH0444431B2 (enrdf_load_stackoverflow) 1992-07-21

Family

ID=11880960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59015157A Granted JPS59175774A (ja) 1984-02-01 1984-02-01 半導体装置

Country Status (1)

Country Link
JP (1) JPS59175774A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012231165A (ja) * 2003-07-23 2012-11-22 Asm America Inc シリコン−オン−インシュレーター構造及びバルク基板に対するＳｉＧｅの堆積

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0728025B2 (ja) * 1987-01-16 1995-03-29 日本電信電話株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012231165A (ja) * 2003-07-23 2012-11-22 Asm America Inc シリコン−オン−インシュレーター構造及びバルク基板に対するＳｉＧｅの堆積

Also Published As

Publication number Publication date
JPS59175774A (ja) 1984-10-04

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