JPS6052067A - 超格子の構造 - Google Patents

超格子の構造

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Publication number
JPS6052067A
JPS6052067A JP58159813A JP15981383A JPS6052067A JP S6052067 A JPS6052067 A JP S6052067A JP 58159813 A JP58159813 A JP 58159813A JP 15981383 A JP15981383 A JP 15981383A JP S6052067 A JPS6052067 A JP S6052067A
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JP
Japan
Prior art keywords
solid layer
semiconductor
layer
band width
forbidden band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58159813A
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English (en)
Other versions
JPH037139B2 (ja
Inventor
Toshio Baba
寿夫 馬場
Takashi Mizutani
隆 水谷
Masaki Ogawa
正毅 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
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Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58159813A priority Critical patent/JPS6052067A/ja
Priority to US06/624,333 priority patent/US4695857A/en
Priority to DE8484304300T priority patent/DE3480631D1/de
Priority to EP84304300A priority patent/EP0133342B1/en
Publication of JPS6052067A publication Critical patent/JPS6052067A/ja
Priority to US07/043,046 priority patent/US4792832A/en
Publication of JPH037139B2 publication Critical patent/JPH037139B2/ja
Granted legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は禁止帯幅が大きなP型半導体を実現できる超格
子の構造に関する。
従来の化合物半導体への不純物のドーピング方法は、S
iやGeの単元素からなる元素半導体へのドーピングと
同様に、一様に化合物半導体中ζこ不純物を含有させる
ものである。GaAs、 InPのような禁止帯幅が2
.Oe v 以下の化合物半導体では、このようなP型
不純物を一様ζこ分有させた構造ζこよっても容易にP
型半導体を得ることができるが、Zn8e、 0d8e
トいッ7.: If −■半導体に代表される禁止帯幅
が2.Oe v以上のワイドギャップ化合物半導体では
、従来構造ではP型半導体が得られないものが多い、 従来のP型不純物をドーピングした化合物半導体の構造
について図面を用いて説明する。
第1図は従来のP型不純物をドーピングした化合物半導
体の概略断面図である。1は半導体基板、2はP型不純
物、3はP型不純物2を均一ζこ含有し半導体基板1の
上に形成した化合物半導体層である。
従来構造ではP型が得られない禁止帯幅の大きな半導体
の例としてZn8eがあり、このZn5e中へのAuの
ドーピングを説明すると次のようになる。分子線エピタ
キシ(MBE)法により基板温度を400℃とし、Zn
位置lこ置換すればP型不純物として働くと考えられる
AuをIXIOGn含有するZ n 8 eを成長させ
ても、n型のZn5e+。
か得られない。この理由は、添加不純物に応じてZn5
e内に固有欠陥が生じ、自己補償がなされるためである
。したがって、自己補償効果のあるZn5eでは他の成
長方法や他のP型不純物を用いても同様にP型半導体は
得られない。
この解決手段としては従来構造とは異なり、P型不純物
と自己補償効果のある半導体とを空間曲に分離する新し
い構造が必要である。
本発明の目的は、かかる従来構造の持つ欠点を除去し、
禁止帯幅が大きなP型半導体が実現できる超格子の構造
を提供することにある。
本発明の超格子の構造は、発珪4亡1正孔波長以下の厚
さを有する第1の固体層と、該第1の固体層より電子親
オ11力と禁止帯幅との和が大きく第た積層構造を持ち
、P型不純物が第1の固体層だけに含有されていること
を特徴とする。
一般に電子親和力と禁止帯幅とのオ[1が異なる半導体
の積層構造において、電子親和力と禁Iヒ帯幅との和が
小さ′11:半導体の厚さが正孔波長以下になると量子
効果が顕著になり、この半導体内には新たなエネルギ準
位(量子化準位)が形成される。
さらに、電子親和力と禁止帯幅との和が大きな半導体の
厚さがこの半導体中を量子化準位の正孔がトンネルでき
るほどに薄くなると、正孔は量子化準位において積層構
造の膜中を自由に運動できるようになる。本発明の構造
はこの条件を満たしているため、第1の固体層から発生
する正孔は量子化準位において積層構造全体に広がる。
したがって、第1の固体層がP型半導体であれば、積層
構造全体もP型半導体とすることが可能となる。
以下、本発明について実施例を示す図面を参照して詳細
に説明する。
第2図は本発明の第1の実施例を示した模式的断面図で
ある。第2図において第1図と同じ番号のものは第1図
と同等物で同一機能を果すものであり、4はP型不純物
2を含有し正孔波長以下の厚さを有する第1の固体層、
5は該第1の固体層4より電子親和力と禁止帯幅との和
が大きく、第1の固体層4中の正孔がトンネル可能な厚
さを有する第2の固体層である。第1の固体層4と第2
の固体層5とが交互に積層し、積層構造を形成している
本実施例を、半導体基板1としてG a A s、不純
物2.:!:L、てBe、第1の固体層4として厚さ5
AのGaA、s、第2の固体層5として厚さ15AのZ
n5eを用いて説明すると次のようlこなる。
G a A s中での室温におけるBeの活性化率はほ
ぼ100%であるので、5AのG a A s中lこは
ドープし7.zBeのほとんどが活性化してBeiとほ
ぼ同量の正孔はG a A sの充満帯端より0.7e
v低い量子化準位においてこの膜全体に広がる。()a
Asとカ Zn8eの電子親給≦は占んど等しいため、電子の量子
化準位はほとんど現われない。したがって、この膜の等
測的な禁止帯幅は2.1eV(!:なる。
結晶ル又長方法としてMBEを用い、膜全体の平均的な
りe濃度としてlXl0cm をドーピングした結果、
室温での正孔濃度として1×10crn(5) が得られた。この結果より、禁止帯幅が2.1evと大
きな半導体であるのにかかわらず、高い正孔濃度を有す
るP型半導体が得られることがわかる。
第3図は本発明の第2の実施例を示した模式的断面図で
ある。第3図において第1、第2図と同じ番号のものは
第1、第2図さ同等物で同一機能を果すものであり、6
は不純物2を含有し正孔波長以下の厚さを有する半導体
層、7は該半導体層6より電子親和力と禁止帯幅との和
が大きく半導体層6中の正孔がトンネル可能な厚さを有
する絶縁体層である。
不純物としてB、半導体層6として厚さ5Aの81、絶
縁体層7として厚さ15AのOaF、を用い、MBE法
により本構造を構成した結果、新しい正孔の量子化準位
は84の充満帯端より0.7 e v低くなり、さらに
新しい電子の量子化準位がS+の伝導帯端よりlev 
高くなるため、禁止帯幅として2.8 e vが得られ
た。そして膜全俸の平均のB濃度としてlX1011m
 ドープbr、=のに対し、1×10c/ILの正孔濃
度が得られた。
(6) 上記の本発明の2つの実施例については、P型不純物が
第1の固体層全体に含有されているとしたが、P型不純
物のドーピングを第1の固体層全体ではなく、第1の固
体層のうち第2の固体層との界面近傍を除く領域だけと
してもよく、またP型不純物を含有しないηF;】の固
体層がデバイ長以上の厚さに積層していなけれCず積層
構造の中に存在しても良い。すなわち(責層構造中のす
べての第1の固体層中に不純物が含まれている必要は必
ずしもない。また、積層構造としては2種類の固体層を
交互にtIt層したものだけしか示さなかったが、3種
類具−ヒの固体層を積層したものであっても、正孔が量
子化準位で膜全体に広がる構造であれば良く、この構造
でもP型半導体が得られることは明らかである。3種類
の固体層を積層したものの例としては、GaA、s/A
/As/Zn5eがあり、GaAs/Zn5e糸よりも
さらに禁止帯幅の広いものが容易に実現できる。
第1の固体層中に含有するP型不純物としては、第1の
固体層がSi、’Ge等の元紫半導体ではB。
A、ll 、 Ga 、 In 、 T/等、GaA、
s、 InP等の■−■化合物半導体ではHe、Mg、
Zn、Od、0等、ZnTe、0dTeのIT−VI化
合物半導体ではAu。
Ag、Ou 等であっても良い。
本発明の実施例では積層する固体層として格子整合のさ
れた半導体または絶縁体について述べたが、一般に積層
構造においては各層の界面において格子不整合によるス
トレスが緩和されるため、格子整合のとれてない半導体
または絶縁体の積層構造でも本発明を実現することは可
能である。さらfこ、Miscibility Gap
に相当する組成(InGaAsSb、InAsPSb等
)で予想される光学的および電気的特性を有するP型半
導体も本発明ζこより実現することができる。
本発明の構造は実施例で示した材料以外のあらゆる半導
体および絶縁体の組合せに対し適用可能である。例えば
、TI−■化合物半導体間の組合せではZn’11.’
e/(jdse、 m−VとIf−Wの化合物半導体の
組合せではG a ’、P / Z n S 、 I 
n P / Od S 、その他の半導体の組合せ占し
ては0uGaSe2/Zn8e、半導体と絶縁体の、a
I合せでは8 i /Mg0−A40Bスピネル化合物
、Ga Plo a F2 f、iどかある。
本発明の構造を得る方法としては、原理的にはどんな結
晶成長方法でi)っても良いが、数Xの膜厚制御性が必
要となるため、MBB法やMOOVD(1’vieta
l Organic ChemicalVaporDe
position)法が適している。中でもM IJ 
E法は原料の入った炉から出る分子線をシャッタの開閉
だけで制御できるため、遷移層が数Aの急峻な界面を容
易に実現することができ、さらにコンビーータによる自
動制御が容易であるため最も適した方法である。
本発明Jこより禁止帯幅が広いP型半導体を実現できる
ので本発明を用いたP型半導体により青色発光の光デバ
イスや高温での使用が可能なトランスポートデバイスが
実現できる。
【図面の簡単な説明】
第1図は従来構造のP型不純物をドープした半導体の模
式的断面図、第2.第3図は本発明の第(9) 1、第2の実施例を示した模式的断面図である。 1・・・半導体基板、 2・・・P型不純物、3・・・
化合物半導体層、 4・・・第1の半導体層、5・・・
第2の半導体層、 6・・・半導体層、7・・・絶縁体
層。 代理人り「理士内 原 晋 (10)

Claims (1)

    【特許請求の範囲】
  1. 正孔波長以下の厚さを有する第1の固体層と、該第1の
    固体層より電子親和力と禁止帯幅との和が大きく第1の
    固体層中の正孔がトンネル可能な厚さを有する第2の固
    体層の少なくとも2種類の固体層を交互に積層した積層
    構造を持ち、P型不純物が第1の固体層だけに含有され
    ていることを特徴とする超格子の構造。
JP58159813A 1983-06-24 1983-08-31 超格子の構造 Granted JPS6052067A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58159813A JPS6052067A (ja) 1983-08-31 1983-08-31 超格子の構造
US06/624,333 US4695857A (en) 1983-06-24 1984-06-25 Superlattice semiconductor having high carrier density
DE8484304300T DE3480631D1 (de) 1983-06-24 1984-06-25 Halbleiterstruktur mit uebergitter hoher traegerdichte.
EP84304300A EP0133342B1 (en) 1983-06-24 1984-06-25 A superlattice type semiconductor structure having a high carrier density
US07/043,046 US4792832A (en) 1983-06-24 1987-04-24 Superlattice semiconductor having high carrier density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159813A JPS6052067A (ja) 1983-08-31 1983-08-31 超格子の構造

Publications (2)

Publication Number Publication Date
JPS6052067A true JPS6052067A (ja) 1985-03-23
JPH037139B2 JPH037139B2 (ja) 1991-01-31

Family

ID=15701806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159813A Granted JPS6052067A (ja) 1983-06-24 1983-08-31 超格子の構造

Country Status (1)

Country Link
JP (1) JPS6052067A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144078A (ja) * 1984-12-17 1986-07-01 Toshiba Corp 半導体発光素子
JPS6294923A (ja) * 1985-10-22 1987-05-01 Nec Corp 半導体材料への不純物ド−ピング方法
JPS62179714A (ja) * 1986-02-04 1987-08-06 Sony Corp 化合物半導体
JPH01296679A (ja) * 1988-05-24 1989-11-30 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JP2021027242A (ja) * 2019-08-07 2021-02-22 キヤノン株式会社 光電変換装置、放射線撮像システム、光電変換システム、移動体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742116A (en) * 1980-08-26 1982-03-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor superlattice crystal
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device
JPS5815892A (ja) * 1981-07-17 1983-01-29 松下電器産業株式会社 一槽式脱水洗濯機

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742116A (en) * 1980-08-26 1982-03-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor superlattice crystal
JPS5815892A (ja) * 1981-07-17 1983-01-29 松下電器産業株式会社 一槽式脱水洗濯機
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144078A (ja) * 1984-12-17 1986-07-01 Toshiba Corp 半導体発光素子
JPS6294923A (ja) * 1985-10-22 1987-05-01 Nec Corp 半導体材料への不純物ド−ピング方法
JPS62179714A (ja) * 1986-02-04 1987-08-06 Sony Corp 化合物半導体
JPH01296679A (ja) * 1988-05-24 1989-11-30 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
JP2021027242A (ja) * 2019-08-07 2021-02-22 キヤノン株式会社 光電変換装置、放射線撮像システム、光電変換システム、移動体

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