JPS57153489A - Manufacture of semiconductor laser element - Google Patents

Manufacture of semiconductor laser element

Info

Publication number
JPS57153489A
JPS57153489A JP3907581A JP3907581A JPS57153489A JP S57153489 A JPS57153489 A JP S57153489A JP 3907581 A JP3907581 A JP 3907581A JP 3907581 A JP3907581 A JP 3907581A JP S57153489 A JPS57153489 A JP S57153489A
Authority
JP
Japan
Prior art keywords
layer
clad
groove
over
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3907581A
Other languages
Japanese (ja)
Inventor
Morichika Yano
Kazuhisa Murata
Saburo Yamamoto
Hiroshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3907581A priority Critical patent/JPS57153489A/en
Publication of JPS57153489A publication Critical patent/JPS57153489A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate a high yield and easy manufacture by forming two clad layers of different thickness in horizontal direction on a substrate having a groove, thereby making oscillation in horizontal direction. CONSTITUTION:An n-Ga As layer 2 is formed on a p-Ga As substrate 1. A stripe layer with width W is formed from the surface of the layer 2, deeper than the layer 2. Over the groove, the first clad layer 3 of p-Ga0.5Al0.5As and the second clad layer of p-Ga0.6Al0.4As overlapping the first, are laminated. An active layer 5 of p-Ga0.83Al0.17As are laminated over the layer 4. Growth surface of the layer 3 is caved in with a width W under the influence of a stripe groove shape. Therefore, the layer 4 is grown thick at this caved-in part. then the third clad layer 6 and a cap layer 7 are consecutively grown over the layer 5. When a current is injected into a semiconductor laser element of this construction, the current flows only in the stripe groove region and the laser oscillation begins in the layer 5 opposing to this region.
JP3907581A 1981-03-17 1981-03-17 Manufacture of semiconductor laser element Pending JPS57153489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3907581A JPS57153489A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3907581A JPS57153489A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS57153489A true JPS57153489A (en) 1982-09-22

Family

ID=12542991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3907581A Pending JPS57153489A (en) 1981-03-17 1981-03-17 Manufacture of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57153489A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147479A (en) * 1983-02-09 1984-08-23 Sharp Corp Semiconductor laser element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59147479A (en) * 1983-02-09 1984-08-23 Sharp Corp Semiconductor laser element
JPH0252868B2 (en) * 1983-02-09 1990-11-14 Sharp Kk

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