JPS57153489A - Manufacture of semiconductor laser element - Google Patents
Manufacture of semiconductor laser elementInfo
- Publication number
- JPS57153489A JPS57153489A JP3907581A JP3907581A JPS57153489A JP S57153489 A JPS57153489 A JP S57153489A JP 3907581 A JP3907581 A JP 3907581A JP 3907581 A JP3907581 A JP 3907581A JP S57153489 A JPS57153489 A JP S57153489A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- clad
- groove
- over
- stripe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To facilitate a high yield and easy manufacture by forming two clad layers of different thickness in horizontal direction on a substrate having a groove, thereby making oscillation in horizontal direction. CONSTITUTION:An n-Ga As layer 2 is formed on a p-Ga As substrate 1. A stripe layer with width W is formed from the surface of the layer 2, deeper than the layer 2. Over the groove, the first clad layer 3 of p-Ga0.5Al0.5As and the second clad layer of p-Ga0.6Al0.4As overlapping the first, are laminated. An active layer 5 of p-Ga0.83Al0.17As are laminated over the layer 4. Growth surface of the layer 3 is caved in with a width W under the influence of a stripe groove shape. Therefore, the layer 4 is grown thick at this caved-in part. then the third clad layer 6 and a cap layer 7 are consecutively grown over the layer 5. When a current is injected into a semiconductor laser element of this construction, the current flows only in the stripe groove region and the laser oscillation begins in the layer 5 opposing to this region.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3907581A JPS57153489A (en) | 1981-03-17 | 1981-03-17 | Manufacture of semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3907581A JPS57153489A (en) | 1981-03-17 | 1981-03-17 | Manufacture of semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57153489A true JPS57153489A (en) | 1982-09-22 |
Family
ID=12542991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3907581A Pending JPS57153489A (en) | 1981-03-17 | 1981-03-17 | Manufacture of semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57153489A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (en) * | 1983-02-09 | 1984-08-23 | Sharp Corp | Semiconductor laser element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
-
1981
- 1981-03-17 JP JP3907581A patent/JPS57153489A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59147479A (en) * | 1983-02-09 | 1984-08-23 | Sharp Corp | Semiconductor laser element |
JPH0252868B2 (en) * | 1983-02-09 | 1990-11-14 | Sharp Kk |
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