JPS6429820A - Active matrix cell and its production - Google Patents

Active matrix cell and its production

Info

Publication number
JPS6429820A
JPS6429820A JP62185083A JP18508387A JPS6429820A JP S6429820 A JPS6429820 A JP S6429820A JP 62185083 A JP62185083 A JP 62185083A JP 18508387 A JP18508387 A JP 18508387A JP S6429820 A JPS6429820 A JP S6429820A
Authority
JP
Japan
Prior art keywords
conductor
semiconductor
insulator
production
layered region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62185083A
Other languages
Japanese (ja)
Inventor
Kinya Kato
Nobuhiko Tsunoda
Tsutomu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62185083A priority Critical patent/JPS6429820A/en
Publication of JPS6429820A publication Critical patent/JPS6429820A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To enhance the stability at the boundary face between semiconductor films and insulator films and to prevent the shorting between a 2nd conductor and the semiconductor. CONSTITUTION:The conductor 103a consisting of an a-Si film provided partly superposed on the 1st conductor 102 and the 1st insulator 103b consisting of the SiNx film thereof are continuously deposited to form a 2-layered region 103. The 2nd insulator 104 constituted of SiNx is formed on the side face of the semiconductor of the 2-layered region 103 and the 2nd conductor 105 is formed on the 2-layered region 103, the 2nd insulator 104 and the 1st conductor 102. The 2nd conductor 105 and the semiconductor 103a are, therefore, insulated by the 2nd insulator 104 on the side face of the semiconductor 103a of the 2-layered region 103. The stability at the boundary face between the semiconductor 103a and the insulator 103b is thereby enhanced and the shorting between the 2nd conductor 105 and the semiconductor 103a is prevented.
JP62185083A 1987-07-24 1987-07-24 Active matrix cell and its production Pending JPS6429820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62185083A JPS6429820A (en) 1987-07-24 1987-07-24 Active matrix cell and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62185083A JPS6429820A (en) 1987-07-24 1987-07-24 Active matrix cell and its production

Publications (1)

Publication Number Publication Date
JPS6429820A true JPS6429820A (en) 1989-01-31

Family

ID=16164526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62185083A Pending JPS6429820A (en) 1987-07-24 1987-07-24 Active matrix cell and its production

Country Status (1)

Country Link
JP (1) JPS6429820A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654369A (en) * 1995-07-25 1997-08-05 Dai-Ichi Kogyo Seiyaku Co., Ltd. Antistatic thermoplastic resin composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654369A (en) * 1995-07-25 1997-08-05 Dai-Ichi Kogyo Seiyaku Co., Ltd. Antistatic thermoplastic resin composition

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