JPS57115880A - Thin film image pickup device in two dimensions - Google Patents
Thin film image pickup device in two dimensionsInfo
- Publication number
- JPS57115880A JPS57115880A JP56002111A JP211181A JPS57115880A JP S57115880 A JPS57115880 A JP S57115880A JP 56002111 A JP56002111 A JP 56002111A JP 211181 A JP211181 A JP 211181A JP S57115880 A JPS57115880 A JP S57115880A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- layer
- entire surface
- dimensions
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002111A JPS57115880A (en) | 1981-01-12 | 1981-01-12 | Thin film image pickup device in two dimensions |
US06/336,991 US4471371A (en) | 1981-01-06 | 1982-01-04 | Thin film image pickup element |
US06/582,642 US4517733A (en) | 1981-01-06 | 1984-02-22 | Process for fabricating thin film image pick-up element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56002111A JPS57115880A (en) | 1981-01-12 | 1981-01-12 | Thin film image pickup device in two dimensions |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57115880A true JPS57115880A (en) | 1982-07-19 |
JPS6258551B2 JPS6258551B2 (enrdf_load_stackoverflow) | 1987-12-07 |
Family
ID=11520233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56002111A Granted JPS57115880A (en) | 1981-01-06 | 1981-01-12 | Thin film image pickup device in two dimensions |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57115880A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59211263A (ja) * | 1983-05-16 | 1984-11-30 | Fuji Photo Film Co Ltd | 放射線像検出方法 |
JPS59211262A (ja) * | 1983-05-16 | 1984-11-30 | Fuji Photo Film Co Ltd | 放射線像検出器およびそれを用いた放射線像検出方法 |
JPS60147173A (ja) * | 1984-01-12 | 1985-08-03 | Canon Inc | フオトセンサアレ− |
US5315102A (en) * | 1991-09-05 | 1994-05-24 | Fuji Xerox Co., Ltd. | Driving device and method for driving two-dimensional contact image sensor |
JPH06216360A (ja) * | 1983-04-04 | 1994-08-05 | Seiko Epson Corp | イメージセンサ |
-
1981
- 1981-01-12 JP JP56002111A patent/JPS57115880A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216360A (ja) * | 1983-04-04 | 1994-08-05 | Seiko Epson Corp | イメージセンサ |
JPS59211263A (ja) * | 1983-05-16 | 1984-11-30 | Fuji Photo Film Co Ltd | 放射線像検出方法 |
JPS59211262A (ja) * | 1983-05-16 | 1984-11-30 | Fuji Photo Film Co Ltd | 放射線像検出器およびそれを用いた放射線像検出方法 |
JPS60147173A (ja) * | 1984-01-12 | 1985-08-03 | Canon Inc | フオトセンサアレ− |
US5315102A (en) * | 1991-09-05 | 1994-05-24 | Fuji Xerox Co., Ltd. | Driving device and method for driving two-dimensional contact image sensor |
Also Published As
Publication number | Publication date |
---|---|
JPS6258551B2 (enrdf_load_stackoverflow) | 1987-12-07 |
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