JPS6258551B2 - - Google Patents

Info

Publication number
JPS6258551B2
JPS6258551B2 JP56002111A JP211181A JPS6258551B2 JP S6258551 B2 JPS6258551 B2 JP S6258551B2 JP 56002111 A JP56002111 A JP 56002111A JP 211181 A JP211181 A JP 211181A JP S6258551 B2 JPS6258551 B2 JP S6258551B2
Authority
JP
Japan
Prior art keywords
opaque
electrodes
electrode
semiconductor layer
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56002111A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57115880A (en
Inventor
Toshihisa Hamano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Priority to JP56002111A priority Critical patent/JPS57115880A/ja
Priority to US06/336,991 priority patent/US4471371A/en
Publication of JPS57115880A publication Critical patent/JPS57115880A/ja
Priority to US06/582,642 priority patent/US4517733A/en
Publication of JPS6258551B2 publication Critical patent/JPS6258551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024—Details of scanning heads ; Means for illuminating the original
    • H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
JP56002111A 1981-01-06 1981-01-12 Thin film image pickup device in two dimensions Granted JPS57115880A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56002111A JPS57115880A (en) 1981-01-12 1981-01-12 Thin film image pickup device in two dimensions
US06/336,991 US4471371A (en) 1981-01-06 1982-01-04 Thin film image pickup element
US06/582,642 US4517733A (en) 1981-01-06 1984-02-22 Process for fabricating thin film image pick-up element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002111A JPS57115880A (en) 1981-01-12 1981-01-12 Thin film image pickup device in two dimensions

Publications (2)

Publication Number Publication Date
JPS57115880A JPS57115880A (en) 1982-07-19
JPS6258551B2 true JPS6258551B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=11520233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002111A Granted JPS57115880A (en) 1981-01-06 1981-01-12 Thin film image pickup device in two dimensions

Country Status (1)

Country Link
JP (1) JPS57115880A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0612811B2 (ja) * 1983-04-04 1994-02-16 セイコーエプソン株式会社 光電変換装置の製造方法
JPS59211262A (ja) * 1983-05-16 1984-11-30 Fuji Photo Film Co Ltd 放射線像検出器およびそれを用いた放射線像検出方法
JPH0682858B2 (ja) * 1983-05-16 1994-10-19 富士写真フイルム株式会社 放射線像検出方法
JPH0682851B2 (ja) * 1984-01-12 1994-10-19 キヤノン株式会社 フオトセンサアレ−
JP3006216B2 (ja) * 1991-09-05 2000-02-07 富士ゼロックス株式会社 ２次元密着型イメージセンサ及びその駆動方法

Also Published As

Publication number Publication date
JPS57115880A (en) 1982-07-19

Similar Documents

Publication Publication Date Title
US4517733A (en) Process for fabricating thin film image pick-up element
US5200634A (en) Thin film phototransistor and photosensor array using the same
US4471371A (en) Thin film image pickup element
EP0361515B1 (en) Thin film phototransistor and photosensor array using the same
KR20000070910A (ko) 박막 트랜지스터와 이를 포함하는 전자 장치
JPH0120592B2 (enrdf_load_stackoverflow)
US4796072A (en) Solid-state imaging device with potential barriers between pixels
US4979007A (en) Photoelectric conversion device
JPS6258551B2 (enrdf_load_stackoverflow)
KR100560347B1 (ko) 지문인식장치의 ｔｆｔ 지문입력기 제조방법
EP0037244B1 (en) Method for fabricating a solid-state imaging device using photoconductive film
JPH0730084A (ja) ２次元密着型イメージセンサ
JPS6258550B2 (enrdf_load_stackoverflow)
JPH0618260B2 (ja) イメージセンサの製造方法
US4133099A (en) Method of manufacturing a charge transfer device
JPH03295275A (ja) 薄膜スイッチング素子アレイ
JP3496917B2 (ja) 薄膜半導体装置及びその製造方法
JPH0384963A (ja) 薄膜トランジスタ
KR20120131674A (ko) Ｘ-ｒａｙ 검출기용 박막 트랜지스터 어레이 기판 및 상기 기판에 구비된 박막 트랜지스터의 제조 방법
KR840001604B1 (ko) 고체촬상소자의 제조방법
JPS60227467A (ja) イメ−ジセンサ
JPH01192166A (ja) 受光素子
EP1181722A1 (en) Low noise and high yield data line structure for imager
JPH04373172A (ja) イメージセンサ
JPH07107930B2 (ja) 光電変換装置の製造法