JPS5710267A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5710267A
JPS5710267A JP8488580A JP8488580A JPS5710267A JP S5710267 A JPS5710267 A JP S5710267A JP 8488580 A JP8488580 A JP 8488580A JP 8488580 A JP8488580 A JP 8488580A JP S5710267 A JPS5710267 A JP S5710267A
Authority
JP
Japan
Prior art keywords
substrate
oxide films
polycrystalline
films
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8488580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467336B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junji Sakurai
Atsuo Iida
Kunihiko Wada
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8488580A priority Critical patent/JPS5710267A/ja
Publication of JPS5710267A publication Critical patent/JPS5710267A/ja
Publication of JPH0467336B2 publication Critical patent/JPH0467336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
JP8488580A 1980-06-23 1980-06-23 Semiconductor device Granted JPS5710267A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8488580A JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8488580A JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5710267A true JPS5710267A (en) 1982-01-19
JPH0467336B2 JPH0467336B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-28

Family

ID=13843210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8488580A Granted JPS5710267A (en) 1980-06-23 1980-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710267A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153850A (ja) * 1982-03-08 1983-09-13 極東鋼弦コンクリ−ト振興株式会社 リング状ｐｃ鋼材の緊張・定着用ブロツク
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
EP0588300A3 (en) * 1992-09-15 1994-10-12 Canon Kk Semiconductor transistor.
JPH0878692A (ja) * 1994-09-01 1996-03-22 Nec Corp Ｓｏｉ型半導体装置およびその製造方法
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513947A (en) * 1978-07-17 1980-01-31 Seiko Epson Corp Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513947A (en) * 1978-07-17 1980-01-31 Seiko Epson Corp Semiconductor integrated circuit device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153850A (ja) * 1982-03-08 1983-09-13 極東鋼弦コンクリ−ト振興株式会社 リング状ｐｃ鋼材の緊張・定着用ブロツク
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
EP0588300A3 (en) * 1992-09-15 1994-10-12 Canon Kk Semiconductor transistor.
US5789790A (en) * 1992-09-15 1998-08-04 Canon Kabushiki Kaisha Semiconductor device
US5998854A (en) * 1992-09-15 1999-12-07 Canon Kabushiki Kaisha Semiconductor device
JPH0878692A (ja) * 1994-09-01 1996-03-22 Nec Corp Ｓｏｉ型半導体装置およびその製造方法

Also Published As

Publication number Publication date
JPH0467336B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-28

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