JPS5688362A - Vertical type power mos transistor - Google Patents

Vertical type power mos transistor

Info

Publication number
JPS5688362A
JPS5688362A JP16538379A JP16538379A JPS5688362A JP S5688362 A JPS5688362 A JP S5688362A JP 16538379 A JP16538379 A JP 16538379A JP 16538379 A JP16538379 A JP 16538379A JP S5688362 A JPS5688362 A JP S5688362A
Authority
JP
Japan
Prior art keywords
source
type
regions
gate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16538379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6313352B2 (enrdf_load_stackoverflow
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16538379A priority Critical patent/JPS5688362A/ja
Publication of JPS5688362A publication Critical patent/JPS5688362A/ja
Publication of JPS6313352B2 publication Critical patent/JPS6313352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16538379A 1979-12-19 1979-12-19 Vertical type power mos transistor Granted JPS5688362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Publications (2)

Publication Number Publication Date
JPS5688362A true JPS5688362A (en) 1981-07-17
JPS6313352B2 JPS6313352B2 (enrdf_load_stackoverflow) 1988-03-25

Family

ID=15811336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16538379A Granted JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Country Status (1)

Country Link
JP (1) JPS5688362A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572220A1 (fr) * 1984-10-23 1986-04-25 Rca Corp Dispositif semi-conducteur a effet de champ
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
FR2640081A1 (fr) * 1988-12-06 1990-06-08 Fuji Electric Co Ltd Transistor a effet de champ vertical
EP0587176A3 (enrdf_load_stackoverflow) * 1992-09-10 1994-04-20 Toshiba Kk

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572220A1 (fr) * 1984-10-23 1986-04-25 Rca Corp Dispositif semi-conducteur a effet de champ
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
FR2640081A1 (fr) * 1988-12-06 1990-06-08 Fuji Electric Co Ltd Transistor a effet de champ vertical
EP0587176A3 (enrdf_load_stackoverflow) * 1992-09-10 1994-04-20 Toshiba Kk
US5420450A (en) * 1992-09-10 1995-05-30 Kabushiki Kaisha Toshiba Semiconductor device having stable breakdown voltage in wiring area

Also Published As

Publication number Publication date
JPS6313352B2 (enrdf_load_stackoverflow) 1988-03-25

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