JPS5674970A - Photoelectric conversion device and its manufacture - Google Patents
Photoelectric conversion device and its manufactureInfo
- Publication number
- JPS5674970A JPS5674970A JP15268779A JP15268779A JPS5674970A JP S5674970 A JPS5674970 A JP S5674970A JP 15268779 A JP15268779 A JP 15268779A JP 15268779 A JP15268779 A JP 15268779A JP S5674970 A JPS5674970 A JP S5674970A
- Authority
- JP
- Japan
- Prior art keywords
- work function
- photoelectric conversion
- electrode
- reverse side
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15268779A JPS5674970A (en) | 1979-11-26 | 1979-11-26 | Photoelectric conversion device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15268779A JPS5674970A (en) | 1979-11-26 | 1979-11-26 | Photoelectric conversion device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5674970A true JPS5674970A (en) | 1981-06-20 |
Family
ID=15545924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15268779A Pending JPS5674970A (en) | 1979-11-26 | 1979-11-26 | Photoelectric conversion device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5674970A (ja) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077174A (ja) * | 1993-01-28 | 1995-01-10 | Gold Star Electron Co Ltd | フォトダイオードおよびその製造方法 |
| JPH07147426A (ja) * | 1993-11-24 | 1995-06-06 | Nec Corp | 半導体装置 |
| JP2007115806A (ja) * | 2005-10-19 | 2007-05-10 | Sumitomo Metal Mining Co Ltd | カーボンナノチューブを用いた太陽電池 |
| WO2009110403A1 (ja) * | 2008-03-07 | 2009-09-11 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
| JP2011528865A (ja) * | 2008-07-21 | 2011-11-24 | インヴィサージ テクノロジーズ インコーポレイテッド | 安定高感度光検出器のための材料、作製機器、および方法、それにより作製される画像センサ |
| US9691931B2 (en) | 2008-04-18 | 2017-06-27 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
| US9735384B2 (en) | 2007-04-18 | 2017-08-15 | Invisage Technologies, Inc. | Photodetectors and photovoltaics based on semiconductor nanocrystals |
| US9871160B2 (en) | 2007-04-18 | 2018-01-16 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
-
1979
- 1979-11-26 JP JP15268779A patent/JPS5674970A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077174A (ja) * | 1993-01-28 | 1995-01-10 | Gold Star Electron Co Ltd | フォトダイオードおよびその製造方法 |
| JPH07147426A (ja) * | 1993-11-24 | 1995-06-06 | Nec Corp | 半導体装置 |
| JP2007115806A (ja) * | 2005-10-19 | 2007-05-10 | Sumitomo Metal Mining Co Ltd | カーボンナノチューブを用いた太陽電池 |
| JP4720426B2 (ja) * | 2005-10-19 | 2011-07-13 | 住友金属鉱山株式会社 | カーボンナノチューブを用いた太陽電池 |
| US9735384B2 (en) | 2007-04-18 | 2017-08-15 | Invisage Technologies, Inc. | Photodetectors and photovoltaics based on semiconductor nanocrystals |
| US9871160B2 (en) | 2007-04-18 | 2018-01-16 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
| WO2009110403A1 (ja) * | 2008-03-07 | 2009-09-11 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
| JPWO2009110403A1 (ja) * | 2008-03-07 | 2011-07-14 | 国立大学法人東北大学 | 光電変換素子構造及び太陽電池 |
| US9691931B2 (en) | 2008-04-18 | 2017-06-27 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
| JP2011528865A (ja) * | 2008-07-21 | 2011-11-24 | インヴィサージ テクノロジーズ インコーポレイテッド | 安定高感度光検出器のための材料、作製機器、および方法、それにより作製される画像センサ |
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