JPS5674969A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS5674969A
JPS5674969A JP15268679A JP15268679A JPS5674969A JP S5674969 A JPS5674969 A JP S5674969A JP 15268679 A JP15268679 A JP 15268679A JP 15268679 A JP15268679 A JP 15268679A JP S5674969 A JPS5674969 A JP S5674969A
Authority
JP
Japan
Prior art keywords
electrode
film
work function
reverse side
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15268679A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15268679A priority Critical patent/JPS5674969A/en
Publication of JPS5674969A publication Critical patent/JPS5674969A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a high photoelectric conversion factor by coating an insulative film or a semi-insulative film on the front/reverse side of a genuine semiconductor substrate and also attaching an electrode of high work function on the front which radiates a light and an electrode of low work function on the reverse side respectively so that an MIS structure may be constituted. CONSTITUTION:Si2N4 films 6, 10 of 5-30Angstrom in thickness are coated on the front radiating a light and the reverse side as opposed to the former of a genuine semiconductor substrate 1. Then an electrode 12 of Pt, Au, Ti, Mo, Ta, W, etc. having a more than 4 eV of work function is attached on a film 6. At that time, in order to allow penetration of a light 8, the average film thickness of the electrode 12 is 5- 300Angstrom On some part, a ''pullout''-type electrode 7 is installed. In addition, on the film 10 on the reverse side as opposed to the electrode 12, an electrode 11 of Al, Be, Mg, Ba, etc. having a low work function of less than 4eV is attached as a photoelectric conversion device of MIS structure. Thus, it is possible to prevent a rebonding in the film 10 surface of numerous carriers generated and improve the coversion efficiency.
JP15268679A 1979-11-26 1979-11-26 Photoelectric conversion device Pending JPS5674969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15268679A JPS5674969A (en) 1979-11-26 1979-11-26 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15268679A JPS5674969A (en) 1979-11-26 1979-11-26 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPS5674969A true JPS5674969A (en) 1981-06-20

Family

ID=15545900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15268679A Pending JPS5674969A (en) 1979-11-26 1979-11-26 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS5674969A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957480A (en) * 1982-09-27 1984-04-03 Agency Of Ind Science & Technol Solar battery
EP0407062A2 (en) * 1989-06-29 1991-01-09 Texas Instruments Incorporated A method and apparatus for forming an infrared detector having a refractory metal
JPH07147426A (en) * 1993-11-24 1995-06-06 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957480A (en) * 1982-09-27 1984-04-03 Agency Of Ind Science & Technol Solar battery
EP0407062A2 (en) * 1989-06-29 1991-01-09 Texas Instruments Incorporated A method and apparatus for forming an infrared detector having a refractory metal
JPH07147426A (en) * 1993-11-24 1995-06-06 Nec Corp Semiconductor device

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