JPS5674969A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS5674969A JPS5674969A JP15268679A JP15268679A JPS5674969A JP S5674969 A JPS5674969 A JP S5674969A JP 15268679 A JP15268679 A JP 15268679A JP 15268679 A JP15268679 A JP 15268679A JP S5674969 A JPS5674969 A JP S5674969A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- work function
- reverse side
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a high photoelectric conversion factor by coating an insulative film or a semi-insulative film on the front/reverse side of a genuine semiconductor substrate and also attaching an electrode of high work function on the front which radiates a light and an electrode of low work function on the reverse side respectively so that an MIS structure may be constituted. CONSTITUTION:Si2N4 films 6, 10 of 5-30Angstrom in thickness are coated on the front radiating a light and the reverse side as opposed to the former of a genuine semiconductor substrate 1. Then an electrode 12 of Pt, Au, Ti, Mo, Ta, W, etc. having a more than 4 eV of work function is attached on a film 6. At that time, in order to allow penetration of a light 8, the average film thickness of the electrode 12 is 5- 300Angstrom On some part, a ''pullout''-type electrode 7 is installed. In addition, on the film 10 on the reverse side as opposed to the electrode 12, an electrode 11 of Al, Be, Mg, Ba, etc. having a low work function of less than 4eV is attached as a photoelectric conversion device of MIS structure. Thus, it is possible to prevent a rebonding in the film 10 surface of numerous carriers generated and improve the coversion efficiency.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15268679A JPS5674969A (en) | 1979-11-26 | 1979-11-26 | Photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15268679A JPS5674969A (en) | 1979-11-26 | 1979-11-26 | Photoelectric conversion device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5674969A true JPS5674969A (en) | 1981-06-20 |
Family
ID=15545900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15268679A Pending JPS5674969A (en) | 1979-11-26 | 1979-11-26 | Photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5674969A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957480A (en) * | 1982-09-27 | 1984-04-03 | Agency Of Ind Science & Technol | Solar battery |
EP0407062A2 (en) * | 1989-06-29 | 1991-01-09 | Texas Instruments Incorporated | A method and apparatus for forming an infrared detector having a refractory metal |
JPH07147426A (en) * | 1993-11-24 | 1995-06-06 | Nec Corp | Semiconductor device |
-
1979
- 1979-11-26 JP JP15268679A patent/JPS5674969A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5957480A (en) * | 1982-09-27 | 1984-04-03 | Agency Of Ind Science & Technol | Solar battery |
EP0407062A2 (en) * | 1989-06-29 | 1991-01-09 | Texas Instruments Incorporated | A method and apparatus for forming an infrared detector having a refractory metal |
JPH07147426A (en) * | 1993-11-24 | 1995-06-06 | Nec Corp | Semiconductor device |
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