JPS56134781A - Photoelectric converter - Google Patents

Photoelectric converter

Info

Publication number
JPS56134781A
JPS56134781A JP3981380A JP3981380A JPS56134781A JP S56134781 A JPS56134781 A JP S56134781A JP 3981380 A JP3981380 A JP 3981380A JP 3981380 A JP3981380 A JP 3981380A JP S56134781 A JPS56134781 A JP S56134781A
Authority
JP
Japan
Prior art keywords
light
plate
diffused reflection
electromotive current
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3981380A
Other languages
Japanese (ja)
Inventor
Kazuo Nishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3981380A priority Critical patent/JPS56134781A/en
Publication of JPS56134781A publication Critical patent/JPS56134781A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To utilize the incident light effectively by forming a diffused reflection part of the bottom surface opposite to the light incident surface window in a case surface. CONSTITUTION:Circular solar cell elements 1a contribute the light electromotive current caused by the incident light even from the bottom surface. The diffused reflection surface is formed on the inner surface of a bottom plate 31 of a case body 3. The diffused reflection plate 31 is formed by evaporating a thin metal film on the convex and concave surface of a resin plate. The thickness L of the solar cell element is so selected that reflected light 8 from the bottom surface contributes effectively to the light electromotive current and the length is smaller than the diffusing length of a minority carrier of the constituting material of the bottom surface of the element. A part which is not covered by electrode metal is provided on the bottom surface of the elements. In this constitution, a part of a light 7 which might be useless can be utilized as a light 10 which is reflected by a window plate 2, thus both parts contribute to the light electromotive current. Therefore the area of the ineffective light receiving surface is decreased, and the photoelectric conversion efficiency can be increased.
JP3981380A 1980-03-25 1980-03-25 Photoelectric converter Pending JPS56134781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3981380A JPS56134781A (en) 1980-03-25 1980-03-25 Photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3981380A JPS56134781A (en) 1980-03-25 1980-03-25 Photoelectric converter

Publications (1)

Publication Number Publication Date
JPS56134781A true JPS56134781A (en) 1981-10-21

Family

ID=12563401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3981380A Pending JPS56134781A (en) 1980-03-25 1980-03-25 Photoelectric converter

Country Status (1)

Country Link
JP (1) JPS56134781A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144179A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS59144178A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Photoelectric converter
JP2001210847A (en) * 2000-01-25 2001-08-03 Hitachi Ltd Concentrating type photovoltaic power generation device and method of manufacturing it
JP2002222976A (en) * 2001-01-29 2002-08-09 Kyocera Corp Photoelectric converter
JP2006024477A (en) * 2004-07-08 2006-01-26 Aisin Seiki Co Ltd Dye-sensitized solar battery and mounting method of the same
WO2011021477A1 (en) * 2009-08-20 2011-02-24 シャープ株式会社 Optical sensor, semiconductor device, and liquid crystal panel
JP2013115121A (en) * 2011-11-25 2013-06-10 Kyocera Corp Component for concentrating solar cell device and concentrating solar cell device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144179A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Manufacture of photoelectric converter
JPS59144178A (en) * 1983-02-07 1984-08-18 Semiconductor Energy Lab Co Ltd Photoelectric converter
JP2001210847A (en) * 2000-01-25 2001-08-03 Hitachi Ltd Concentrating type photovoltaic power generation device and method of manufacturing it
JP2002222976A (en) * 2001-01-29 2002-08-09 Kyocera Corp Photoelectric converter
JP2006024477A (en) * 2004-07-08 2006-01-26 Aisin Seiki Co Ltd Dye-sensitized solar battery and mounting method of the same
WO2011021477A1 (en) * 2009-08-20 2011-02-24 シャープ株式会社 Optical sensor, semiconductor device, and liquid crystal panel
CN102473716A (en) * 2009-08-20 2012-05-23 夏普株式会社 Optical sensor, semiconductor device, and liquid crystal panel
JP2013115121A (en) * 2011-11-25 2013-06-10 Kyocera Corp Component for concentrating solar cell device and concentrating solar cell device

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