JPS57187974A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS57187974A
JPS57187974A JP56072197A JP7219781A JPS57187974A JP S57187974 A JPS57187974 A JP S57187974A JP 56072197 A JP56072197 A JP 56072197A JP 7219781 A JP7219781 A JP 7219781A JP S57187974 A JPS57187974 A JP S57187974A
Authority
JP
Japan
Prior art keywords
layer
type
solar cell
depletion
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56072197A
Other languages
Japanese (ja)
Other versions
JPS6155269B2 (en
Inventor
Michio Kotani
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56072197A priority Critical patent/JPS57187974A/en
Publication of JPS57187974A publication Critical patent/JPS57187974A/en
Publication of JPS6155269B2 publication Critical patent/JPS6155269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve photoelectric conversion efficiency of a solar cell by forming an N type layer and an I type layer formed on the N type layer and P type layers formed selectively in the I type layer. CONSTITUTION:The voltage of this solar cell is generated between an electrode 6 and a stainless steel substrate 4. An N type amorphous Si layer 3 and an I type amorphous Si layer 2 are formed by glow discharge on the substrate 4 successively. P type layers 5 formed selectively in the surface region of the layer 2 can be made by ion-implantation of B. The distance between the adjacent layers 5 is approximately the distance by which the layer 2 becomes depletion layer at the built-in potential. With this constitution, the layer 2 is turned into the depletion layer two-dimentionally and even if the layer 2 is made relatively thicker for having good light absorption it is turned into the depletion layer easily. Moreover, as the incident light enters the layer 2 directly without being absorbed by the layer 5, pairs of electron-positive hole can be generated effectively, which is advantageous for electromotive force.
JP56072197A 1981-05-15 1981-05-15 Solar cell Granted JPS57187974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072197A JPS57187974A (en) 1981-05-15 1981-05-15 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072197A JPS57187974A (en) 1981-05-15 1981-05-15 Solar cell

Publications (2)

Publication Number Publication Date
JPS57187974A true JPS57187974A (en) 1982-11-18
JPS6155269B2 JPS6155269B2 (en) 1986-11-27

Family

ID=13482253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072197A Granted JPS57187974A (en) 1981-05-15 1981-05-15 Solar cell

Country Status (1)

Country Link
JP (1) JPS57187974A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667060A (en) * 1985-05-28 1987-05-19 Spire Corporation Back junction photovoltaic solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4667060A (en) * 1985-05-28 1987-05-19 Spire Corporation Back junction photovoltaic solar cell

Also Published As

Publication number Publication date
JPS6155269B2 (en) 1986-11-27

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