JPS56160077A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS56160077A JPS56160077A JP6312880A JP6312880A JPS56160077A JP S56160077 A JPS56160077 A JP S56160077A JP 6312880 A JP6312880 A JP 6312880A JP 6312880 A JP6312880 A JP 6312880A JP S56160077 A JPS56160077 A JP S56160077A
- Authority
- JP
- Japan
- Prior art keywords
- concaves
- convexes
- substrate
- aluminum substrate
- cyclically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a high efficiency and enable the use of a low priced substrate of Al or the like by a method wherein concaves and convexes are cyclically formed on a substrate surface and orientations of the concaves and convexes are made parallel to some crystal orientation faces of a crystalline semiconductor layer. CONSTITUTION:On the aluminum substrate 11 on the surface is formed the concaves and convexes cyclically on which an Al2O3 films 13 are attached by anodic oxidation or spatter evaporation. An opening 14 not covered with the Al2O3 film 13 is formed at a small part on the aluminum substrate 11. Then, a top electrode 17 is fitted after a silicon single crystal layer 15 and a P type semiconductor layer 16 are formed. The orientation of the main surface of the aluminum substrate 11 on which the concaves and convexes are formed is made parallel to some crystal orientation faces of the silicon single crystal layer 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6312880A JPS56160077A (en) | 1980-05-13 | 1980-05-13 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6312880A JPS56160077A (en) | 1980-05-13 | 1980-05-13 | Solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56160077A true JPS56160077A (en) | 1981-12-09 |
| JPS6154275B2 JPS6154275B2 (en) | 1986-11-21 |
Family
ID=13220319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6312880A Granted JPS56160077A (en) | 1980-05-13 | 1980-05-13 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56160077A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077174A (en) * | 1993-01-28 | 1995-01-10 | Gold Star Electron Co Ltd | Photodiode and preparation thereof |
-
1980
- 1980-05-13 JP JP6312880A patent/JPS56160077A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH077174A (en) * | 1993-01-28 | 1995-01-10 | Gold Star Electron Co Ltd | Photodiode and preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6154275B2 (en) | 1986-11-21 |
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