JPS57162475A - Photoelectromotive element and manufacture thereof - Google Patents

Photoelectromotive element and manufacture thereof

Info

Publication number
JPS57162475A
JPS57162475A JP56049111A JP4911181A JPS57162475A JP S57162475 A JPS57162475 A JP S57162475A JP 56049111 A JP56049111 A JP 56049111A JP 4911181 A JP4911181 A JP 4911181A JP S57162475 A JPS57162475 A JP S57162475A
Authority
JP
Japan
Prior art keywords
film
substrate
semiconductor film
photoradiation
annealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56049111A
Other languages
Japanese (ja)
Inventor
Yoshikazu Hori
Yoji Fukuda
Yoshinobu Tsujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56049111A priority Critical patent/JPS57162475A/en
Publication of JPS57162475A publication Critical patent/JPS57162475A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To manufacture the photoelectromotive element with the stable characteristics and the rapid reponse by a method wherein, after obliquely evaporating the semiconductor film generating the electromotive power by means of the photoradiation on the substrate, said semiconductor film is annealed at 250- 400 deg.C in the vacuum status. CONSTITUTION:The semiconductor thin film 2 such as CdTe, PbS, Si Ge, GaAs, InP and the like is formed on the substrate 1 such as the glass and the like meeting the normal of said substrate 1 and the evaporating direction at the angle of around 30 deg.. Next the electrode 4 and 4' making use of Al and the like are respectively mounted on the both ends of the surface of said film 2 which is annealed at 250-400 deg.C for approximate 60min in the vacuum status. Then the electromotive power is output between the electrode 4 and 4' by means of the photoradiation on the surface 3 of the electromotive film 2 or the reverse surface 6. Through these procedures, the rejointing speed around the surface is accelerated reducing the scattering of carrier inside the semiconductor film 2 and increasing the photoelectric current.
JP56049111A 1981-03-31 1981-03-31 Photoelectromotive element and manufacture thereof Pending JPS57162475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56049111A JPS57162475A (en) 1981-03-31 1981-03-31 Photoelectromotive element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56049111A JPS57162475A (en) 1981-03-31 1981-03-31 Photoelectromotive element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57162475A true JPS57162475A (en) 1982-10-06

Family

ID=12821952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56049111A Pending JPS57162475A (en) 1981-03-31 1981-03-31 Photoelectromotive element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57162475A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210017A (en) * 2004-01-26 2005-08-04 Yoshinori Oyama Photoelectromotive element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363024A (en) * 1976-11-18 1978-06-06 Fuji Xerox Co Ltd Liquid developing agent
JPS5536950A (en) * 1978-09-05 1980-03-14 Fuji Photo Film Co Ltd Manufacturing of thin film photocell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363024A (en) * 1976-11-18 1978-06-06 Fuji Xerox Co Ltd Liquid developing agent
JPS5536950A (en) * 1978-09-05 1980-03-14 Fuji Photo Film Co Ltd Manufacturing of thin film photocell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210017A (en) * 2004-01-26 2005-08-04 Yoshinori Oyama Photoelectromotive element

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