JPS5693332A - Glass passivation type semiconductor element - Google Patents
Glass passivation type semiconductor elementInfo
- Publication number
- JPS5693332A JPS5693332A JP16958279A JP16958279A JPS5693332A JP S5693332 A JPS5693332 A JP S5693332A JP 16958279 A JP16958279 A JP 16958279A JP 16958279 A JP16958279 A JP 16958279A JP S5693332 A JPS5693332 A JP S5693332A
- Authority
- JP
- Japan
- Prior art keywords
- type
- resistance layer
- layer
- substrate
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 title abstract 5
- 238000002161 passivation Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 230000005684 electric field Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To attempt the elevation of reverse characteristic of the glass passivation type semiconductor element by a method wherein a unilaterally conductive type high resistance layer, low resistance layer being formed on one side surface of a substrate, are provided, a ring type projecting part is formed from the low resistance layer to the high resistance layer, a ring type groove is provided from the opposite side face from the substrate reaching to the projecting part and glass is adhered on it. CONSTITUTION:The Si substrate 34 providing with an n type high resistance layer 31, an n<+> type low resistance layer 32, a p<+> type low resistance layer 33, is prepared. The projecting part 331 projecting into the n type layer 31 is provided on the p<+> type layer 33. After the ring type groove 35 is formed from the surface side of the substrate 34 reaching to the projecting part 331, a glass coat 36 is adhered and is processed as usual to complete the element. By this costitution, the face of the groove 35 intersects with the n type layer forming ''positive bevel''. Accordingly the electric field at the surface of the n type layer 31 coming in contact with the glass film 36 is moderated, and the reverse characteristic is elevated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16958279A JPS5693332A (en) | 1979-12-26 | 1979-12-26 | Glass passivation type semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16958279A JPS5693332A (en) | 1979-12-26 | 1979-12-26 | Glass passivation type semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5693332A true JPS5693332A (en) | 1981-07-28 |
Family
ID=15889142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16958279A Pending JPS5693332A (en) | 1979-12-26 | 1979-12-26 | Glass passivation type semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5693332A (en) |
-
1979
- 1979-12-26 JP JP16958279A patent/JPS5693332A/en active Pending
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