JPS5669833A - Fine processing method of thin film - Google Patents
Fine processing method of thin filmInfo
- Publication number
- JPS5669833A JPS5669833A JP14516079A JP14516079A JPS5669833A JP S5669833 A JPS5669833 A JP S5669833A JP 14516079 A JP14516079 A JP 14516079A JP 14516079 A JP14516079 A JP 14516079A JP S5669833 A JPS5669833 A JP S5669833A
- Authority
- JP
- Japan
- Prior art keywords
- film
- separating space
- fine separating
- fine
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14516079A JPS5669833A (en) | 1979-11-09 | 1979-11-09 | Fine processing method of thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14516079A JPS5669833A (en) | 1979-11-09 | 1979-11-09 | Fine processing method of thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5669833A true JPS5669833A (en) | 1981-06-11 |
JPS5719571B2 JPS5719571B2 (US20030204162A1-20031030-M00001.png) | 1982-04-23 |
Family
ID=15378807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14516079A Granted JPS5669833A (en) | 1979-11-09 | 1979-11-09 | Fine processing method of thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5669833A (US20030204162A1-20031030-M00001.png) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893343A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | 半導体集積回路の分離領域形成方法 |
JPS5952848A (ja) * | 1982-09-20 | 1984-03-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS5978542A (ja) * | 1982-10-27 | 1984-05-07 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6211241U (US20030204162A1-20031030-M00001.png) * | 1985-07-02 | 1987-01-23 |
-
1979
- 1979-11-09 JP JP14516079A patent/JPS5669833A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893343A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | 半導体集積回路の分離領域形成方法 |
JPS5952848A (ja) * | 1982-09-20 | 1984-03-27 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPS5978542A (ja) * | 1982-10-27 | 1984-05-07 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
JPH0586659B2 (US20030204162A1-20031030-M00001.png) * | 1982-10-27 | 1993-12-13 | Nippon Telegraph & Telephone |
Also Published As
Publication number | Publication date |
---|---|
JPS5719571B2 (US20030204162A1-20031030-M00001.png) | 1982-04-23 |
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