JPS5643742A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS5643742A
JPS5643742A JP11952279A JP11952279A JPS5643742A JP S5643742 A JPS5643742 A JP S5643742A JP 11952279 A JP11952279 A JP 11952279A JP 11952279 A JP11952279 A JP 11952279A JP S5643742 A JPS5643742 A JP S5643742A
Authority
JP
Japan
Prior art keywords
film
nitriding
nitriding film
wiring
plasma cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11952279A
Other languages
English (en)
Inventor
Haruhiko Abe
Hiroji Harada
Shigeji Kinoshita
Katsuhiro Hirata
Masahiko Denda
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11952279A priority Critical patent/JPS5643742A/ja
Priority to DE3034900A priority patent/DE3034900C2/de
Publication of JPS5643742A publication Critical patent/JPS5643742A/ja
Priority to US06/455,251 priority patent/US4454166A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP11952279A 1979-09-17 1979-09-17 Manufacture of semiconductor Pending JPS5643742A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11952279A JPS5643742A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor
DE3034900A DE3034900C2 (de) 1979-09-17 1980-09-16 Verfahren zur Herstellung einer aluminiumhaltigen Leiterschicht
US06/455,251 US4454166A (en) 1979-09-17 1983-01-03 Process for preparing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11952279A JPS5643742A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS5643742A true JPS5643742A (en) 1981-04-22

Family

ID=14763351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11952279A Pending JPS5643742A (en) 1979-09-17 1979-09-17 Manufacture of semiconductor

Country Status (3)

Country Link
US (1) US4454166A (ja)
JP (1) JPS5643742A (ja)
DE (1) DE3034900C2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01288274A (ja) * 1988-05-16 1989-11-20 Tokyo Electric Co Ltd 低周波治療器
JPH05502684A (ja) * 1989-12-04 1993-05-13 イーストマン ケミカル カンパニー 新規コポリエステル及びその押出吹込成形品

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381595A (en) * 1979-10-09 1983-05-03 Mitsubishi Denki Kabushiki Kaisha Process for preparing multilayer interconnection
JPS5871589A (ja) * 1981-10-22 1983-04-28 シャープ株式会社 薄膜ｅｌ素子
DE3228399A1 (de) * 1982-07-29 1984-02-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten schaltung
JPS59198734A (ja) * 1983-04-25 1984-11-10 Mitsubishi Electric Corp 多層配線構造
US4600624A (en) * 1983-09-20 1986-07-15 International Business Machines Corporation Composite insulator structure
US4601939A (en) * 1983-09-20 1986-07-22 International Business Machines Corporation Composite insulator structure
DE3545155C2 (de) * 1984-12-26 1994-03-10 Toshiba Kawasaki Kk Elektromagnetisches Durchflußmeßgerät
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5270254A (en) * 1991-03-27 1993-12-14 Sgs-Thomson Microelectronics, Inc. Integrated circuit metallization with zero contact enclosure requirements and method of making the same
US5783485A (en) * 1996-07-19 1998-07-21 Motorola, Inc. Process for fabricating a metallized interconnect

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756685A (fr) * 1969-09-25 1971-03-25 Motorola Inc Procede pour empecher une reaction chimique entre l'aluminium et le bioxyde de silicium dans un dispositif
US3844831A (en) * 1972-10-27 1974-10-29 Ibm Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
US4062720A (en) * 1976-08-23 1977-12-13 International Business Machines Corporation Process for forming a ledge-free aluminum-copper-silicon conductor structure
JPS5487175A (en) * 1977-12-23 1979-07-11 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS5595340A (en) * 1979-01-10 1980-07-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Preparation of semiconductor device
US4330569A (en) * 1979-05-25 1982-05-18 Ncr Corporation Method for conditioning nitride surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01288274A (ja) * 1988-05-16 1989-11-20 Tokyo Electric Co Ltd 低周波治療器
JPH0657261B2 (ja) * 1988-05-16 1994-08-03 東京電気株式会社 低周波治療器
JPH05502684A (ja) * 1989-12-04 1993-05-13 イーストマン ケミカル カンパニー 新規コポリエステル及びその押出吹込成形品

Also Published As

Publication number Publication date
US4454166A (en) 1984-06-12
DE3034900C2 (de) 1985-03-21
DE3034900A1 (de) 1981-04-09

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