JPS5640256A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5640256A
JPS5640256A JP11769979A JP11769979A JPS5640256A JP S5640256 A JPS5640256 A JP S5640256A JP 11769979 A JP11769979 A JP 11769979A JP 11769979 A JP11769979 A JP 11769979A JP S5640256 A JPS5640256 A JP S5640256A
Authority
JP
Japan
Prior art keywords
layer
collector
type
ion implantation
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11769979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641933B2 (enExample
Inventor
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11769979A priority Critical patent/JPS5640256A/ja
Publication of JPS5640256A publication Critical patent/JPS5640256A/ja
Publication of JPS641933B2 publication Critical patent/JPS641933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0121—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves
    • H10W10/0124—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] in regions recessed from the surface, e.g. in trenches or grooves the regions having non-rectangular shapes, e.g. rounded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H10W10/0126—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics introducing electrical active impurities in local oxidation regions to create channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP11769979A 1979-09-11 1979-09-11 Manufacture of semiconductor device Granted JPS5640256A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11769979A JPS5640256A (en) 1979-09-11 1979-09-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11769979A JPS5640256A (en) 1979-09-11 1979-09-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5640256A true JPS5640256A (en) 1981-04-16
JPS641933B2 JPS641933B2 (enExample) 1989-01-13

Family

ID=14718107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11769979A Granted JPS5640256A (en) 1979-09-11 1979-09-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5640256A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148325A (ja) * 1982-02-28 1983-09-03 Matsushita Electric Works Ltd 床暖房装置
JPS5990925A (ja) * 1982-11-17 1984-05-25 Matsushita Electronics Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53117988A (en) * 1977-03-25 1978-10-14 Hitachi Ltd Production of bipolar ic

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53117988A (en) * 1977-03-25 1978-10-14 Hitachi Ltd Production of bipolar ic

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148325A (ja) * 1982-02-28 1983-09-03 Matsushita Electric Works Ltd 床暖房装置
JPS5990925A (ja) * 1982-11-17 1984-05-25 Matsushita Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS641933B2 (enExample) 1989-01-13

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