JPS53117988A - Production of bipolar ic - Google Patents
Production of bipolar icInfo
- Publication number
- JPS53117988A JPS53117988A JP3217977A JP3217977A JPS53117988A JP S53117988 A JPS53117988 A JP S53117988A JP 3217977 A JP3217977 A JP 3217977A JP 3217977 A JP3217977 A JP 3217977A JP S53117988 A JPS53117988 A JP S53117988A
- Authority
- JP
- Japan
- Prior art keywords
- bipolar
- production
- mask
- make
- simple process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To make a bipolar IC of high performance and high reliability with a simple process by providing channel stoppers without using any mask.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3217977A JPS53117988A (en) | 1977-03-25 | 1977-03-25 | Production of bipolar ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3217977A JPS53117988A (en) | 1977-03-25 | 1977-03-25 | Production of bipolar ic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53117988A true JPS53117988A (en) | 1978-10-14 |
Family
ID=12351697
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3217977A Pending JPS53117988A (en) | 1977-03-25 | 1977-03-25 | Production of bipolar ic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53117988A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5640256A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57184230A (en) * | 1981-02-17 | 1982-11-12 | Fairchild Camera Instr Co | Method of producing semiconductor structure reducing lateral distance between buried regions |
JPS57197832A (en) * | 1981-05-29 | 1982-12-04 | Nec Corp | Manufacture of semiconductor device |
JPS58141537A (en) * | 1982-02-17 | 1983-08-22 | Nec Corp | Semiconductor device |
-
1977
- 1977-03-25 JP JP3217977A patent/JPS53117988A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5640256A (en) * | 1979-09-11 | 1981-04-16 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS57184230A (en) * | 1981-02-17 | 1982-11-12 | Fairchild Camera Instr Co | Method of producing semiconductor structure reducing lateral distance between buried regions |
JPS57197832A (en) * | 1981-05-29 | 1982-12-04 | Nec Corp | Manufacture of semiconductor device |
JPS58141537A (en) * | 1982-02-17 | 1983-08-22 | Nec Corp | Semiconductor device |
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