JPS55118674A - Fabricating method of semiconductor device - Google Patents

Fabricating method of semiconductor device

Info

Publication number
JPS55118674A
JPS55118674A JP2529179A JP2529179A JPS55118674A JP S55118674 A JPS55118674 A JP S55118674A JP 2529179 A JP2529179 A JP 2529179A JP 2529179 A JP2529179 A JP 2529179A JP S55118674 A JPS55118674 A JP S55118674A
Authority
JP
Japan
Prior art keywords
film
gate electrode
thereat
thermally oxidized
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2529179A
Other languages
Japanese (ja)
Other versions
JPS6159664B2 (en
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2529179A priority Critical patent/JPS55118674A/en
Priority to US06/127,337 priority patent/US4343078A/en
Publication of JPS55118674A publication Critical patent/JPS55118674A/en
Publication of JPS6159664B2 publication Critical patent/JPS6159664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To provide an insulated gate type FET having a highly accurate short channel by forming a thin gate insulating film, removing the film with a gate electrode as a mask, introducing impurity into the exposed portion to form drain and source regions therein. CONSTITUTION:A p-type silicon monocrystalline substrate 1 is entirely thermally oxidized to form a SiO2 film 2, an opening is perforated thereat, and is then thermally oxidized to grow a thin gate insulating film 3 of 400-800Angstrom . Then, polycrystalline silicon film of 600Angstrom is grown in gas phase thereon, etched to form a gate electrode 4. A resist film is provided as required, with the gate electrode 4 as a mask the film 2 is removed to the vicinity of the gate insulating film 3, and an opening 7 is provided thereat. Then, a phosphorus is diffused in the substrate 1, oxidized, and n-type drain and source regions 8 and a gate electrode 9 are simultaneously formed thereat. In case the film 3 is overetched in this case, an air gap is thermally oxidized to fill SiO2 therein additionally as one step.
JP2529179A 1979-03-05 1979-03-05 Fabricating method of semiconductor device Granted JPS55118674A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2529179A JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device
US06/127,337 US4343078A (en) 1979-03-05 1980-03-05 IGFET Forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2529179A JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55118674A true JPS55118674A (en) 1980-09-11
JPS6159664B2 JPS6159664B2 (en) 1986-12-17

Family

ID=12161905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2529179A Granted JPS55118674A (en) 1979-03-05 1979-03-05 Fabricating method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55118674A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153370A (en) * 1979-05-18 1980-11-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153370A (en) * 1979-05-18 1980-11-29 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacturing method of semiconductor device
JPH0213827B2 (en) * 1979-05-18 1990-04-05 Cho Eru Esu Ai Gijutsu Kenkyu Kumiai

Also Published As

Publication number Publication date
JPS6159664B2 (en) 1986-12-17

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