JPS56164567A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56164567A
JPS56164567A JP6807980A JP6807980A JPS56164567A JP S56164567 A JPS56164567 A JP S56164567A JP 6807980 A JP6807980 A JP 6807980A JP 6807980 A JP6807980 A JP 6807980A JP S56164567 A JPS56164567 A JP S56164567A
Authority
JP
Japan
Prior art keywords
type
region
type fet
injected
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6807980A
Other languages
Japanese (ja)
Inventor
Shoichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6807980A priority Critical patent/JPS56164567A/en
Publication of JPS56164567A publication Critical patent/JPS56164567A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To simplify manufacturing process and improve characteristics controllability and reporducibility, in an E/D type gate circuit to be provided on a semi-insulated GaAs substrate, by making impurity concentration of a D-type channel higher than concentration of an E-type channel. CONSTITUTION:Surface of a semi-insulated GaAs substrate 1 is covered with an insulation film 12, a resist mask 13 on which an E-type channel region is bored is provided, and ion is injected into an N<-> layer 14. And then, another resist mask 15 is provided, and an N<+> layer is injected to E-type FET source drain regions 161 and 162 and D-type FET forming region 163. After removing a resist 15, providing hole on the source drain region of the insulation film 12 and forming wiring layers 171-173 of such a metal as an Au-Ge alloy, a hole is provided on the gate region and aluminum schottky gates 181 and 182 are provided. As a circuit consisting of thus manufactured E-type FET Q11 and Dk-type FET Q12 does not require etching process, etc., manufacturing process can be simplified and fluctuation of characteristics can be minimized.
JP6807980A 1980-05-22 1980-05-22 Semiconductor device Pending JPS56164567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6807980A JPS56164567A (en) 1980-05-22 1980-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6807980A JPS56164567A (en) 1980-05-22 1980-05-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56164567A true JPS56164567A (en) 1981-12-17

Family

ID=13363387

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6807980A Pending JPS56164567A (en) 1980-05-22 1980-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164567A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112371A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Semiconductor device
JPS58139473A (en) * 1982-02-15 1983-08-18 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS58139474A (en) * 1982-02-15 1983-08-18 Oki Electric Ind Co Ltd Manufacture of compound semiconductor device
JPS58122629U (en) * 1982-02-16 1983-08-20 株式会社クボタ front wheel drive
JPS58122631U (en) * 1982-02-16 1983-08-20 株式会社クボタ Gear shift control device for agricultural tractors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112371A (en) * 1981-12-26 1983-07-04 Fujitsu Ltd Semiconductor device
JPS58139473A (en) * 1982-02-15 1983-08-18 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS58139474A (en) * 1982-02-15 1983-08-18 Oki Electric Ind Co Ltd Manufacture of compound semiconductor device
JPS58122629U (en) * 1982-02-16 1983-08-20 株式会社クボタ front wheel drive
JPS58122631U (en) * 1982-02-16 1983-08-20 株式会社クボタ Gear shift control device for agricultural tractors

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