JPS56137622A - Forming of cross pattern electrode - Google Patents

Forming of cross pattern electrode

Info

Publication number
JPS56137622A
JPS56137622A JP4089280A JP4089280A JPS56137622A JP S56137622 A JPS56137622 A JP S56137622A JP 4089280 A JP4089280 A JP 4089280A JP 4089280 A JP4089280 A JP 4089280A JP S56137622 A JPS56137622 A JP S56137622A
Authority
JP
Japan
Prior art keywords
pattern
conductor layer
pattern electrode
cross pattern
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4089280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6328337B2 (enrdf_load_stackoverflow
Inventor
Masaki Ito
Sotaro Edokoro
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4089280A priority Critical patent/JPS56137622A/ja
Publication of JPS56137622A publication Critical patent/JPS56137622A/ja
Publication of JPS6328337B2 publication Critical patent/JPS6328337B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP4089280A 1980-03-28 1980-03-28 Forming of cross pattern electrode Granted JPS56137622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4089280A JPS56137622A (en) 1980-03-28 1980-03-28 Forming of cross pattern electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089280A JPS56137622A (en) 1980-03-28 1980-03-28 Forming of cross pattern electrode

Publications (2)

Publication Number Publication Date
JPS56137622A true JPS56137622A (en) 1981-10-27
JPS6328337B2 JPS6328337B2 (enrdf_load_stackoverflow) 1988-06-08

Family

ID=12593158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4089280A Granted JPS56137622A (en) 1980-03-28 1980-03-28 Forming of cross pattern electrode

Country Status (1)

Country Link
JP (1) JPS56137622A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175830A (ja) * 1982-04-08 1983-10-15 Matsushita Electric Ind Co Ltd パタ−ン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58175830A (ja) * 1982-04-08 1983-10-15 Matsushita Electric Ind Co Ltd パタ−ン形成方法

Also Published As

Publication number Publication date
JPS6328337B2 (enrdf_load_stackoverflow) 1988-06-08

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