JPS56126941A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56126941A JPS56126941A JP3030680A JP3030680A JPS56126941A JP S56126941 A JPS56126941 A JP S56126941A JP 3030680 A JP3030680 A JP 3030680A JP 3030680 A JP3030680 A JP 3030680A JP S56126941 A JPS56126941 A JP S56126941A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- layer
- thick
- sio2
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor device with a high reliability having a flat surface by forming an element region surrounded with a conductive thick film poly Si on SiO2 having a thick film portion corresponding to a thick film section of a conductive poly Si stacked on an Si substrate through SiO2. CONSTITUTION:An SiO22 of 1,000Angstrom and P-added poly Si3 about 0.6mum thick and an Si3N4 mask 4 are stacked on an N type Si substrate 1 and an ion is injected thereinto to form a channel stopper 5. Subsequently, oxidation is made so as to leave an SiO26 of about 6,000Angstrom and an unoxidized layer 33 about 0.2mum thick therebeneath. After removal of the mask 4, windows are etched through the layer 3 and the layer 2 to make a gate oxide film 7 which covers the film 7. Thereafter, a gate electrode 8, a source 9, a drain 10 and an offset gate 11 are made of poly Si by a normal method and covered with an SiO212 on which electrodes 14-16 are applied. This facilitates the mounting of the electrode on the poly Si layer. A highly dielectric conversion with the SiO2 thick film can check the formation of an inverted layer while smoothing the surface thereby eliminating disconnection.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3030680A JPS56126941A (en) | 1980-03-12 | 1980-03-12 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3030680A JPS56126941A (en) | 1980-03-12 | 1980-03-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56126941A true JPS56126941A (en) | 1981-10-05 |
Family
ID=12300072
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3030680A Pending JPS56126941A (en) | 1980-03-12 | 1980-03-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56126941A (en) |
-
1980
- 1980-03-12 JP JP3030680A patent/JPS56126941A/en active Pending
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