JPS56126942A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56126942A JPS56126942A JP3030780A JP3030780A JPS56126942A JP S56126942 A JPS56126942 A JP S56126942A JP 3030780 A JP3030780 A JP 3030780A JP 3030780 A JP3030780 A JP 3030780A JP S56126942 A JPS56126942 A JP S56126942A
- Authority
- JP
- Japan
- Prior art keywords
- thick
- layer
- poly
- thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain a device with a high reliability preventing disconnection by stacking a conductive poly Si layer having a thick and thin section and an SiO2 layer having a thin and thick section corresponding to the thick and thin arrangement thereof an SiO2 on an Si substrate while an activated region is provided on the substrate surface excluding the section immediately beneath the conductive poly Si thin film. CONSTITUTION:An SiO22 of 1,000Angstrom , a P-added poly Si3 and an Si3N4 mask are stacked on an N type Si substrate 1 and an ion is injected thereinto to make a channel stopper. The layer 3 is selectively oxidzed so as to leave an isolating oxide thick film 6 and a layer 33 about 0.6mum therebeneath. The mask 4 is removed and the layers 3 and 2 are selectively etched to make a window. When a gate oxide film about 1,000Angstrom thick is made, it provides an oxide film 7. Thereafter, according to an accepted practice, the assembly is provided with a poly Si gate 8, a source 9, a drain 10 and an offset gate 11 and covered with an SiO212 on which electrodes 14-16 are mounted. This facilitates the mounting of the electrodes on the poly Si layer while smoothing the surface thereof thereby preventing disconnection and increasing the reliability.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3030780A JPS56126942A (en) | 1980-03-12 | 1980-03-12 | Semiconductor device |
EP19810101328 EP0035690B1 (en) | 1980-03-06 | 1981-02-24 | Semiconductor device using component insulation and method of manufacturing the same |
DE8181101328T DE3176909D1 (en) | 1980-03-06 | 1981-02-24 | Semiconductor device using component insulation and method of manufacturing the same |
US06/240,300 US4441941A (en) | 1980-03-06 | 1981-03-04 | Method for manufacturing a semiconductor device employing element isolation using insulating materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3030780A JPS56126942A (en) | 1980-03-12 | 1980-03-12 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56126942A true JPS56126942A (en) | 1981-10-05 |
Family
ID=12300107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3030780A Pending JPS56126942A (en) | 1980-03-06 | 1980-03-12 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56126942A (en) |
-
1980
- 1980-03-12 JP JP3030780A patent/JPS56126942A/en active Pending
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