JPS56126940A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56126940A
JPS56126940A JP3030580A JP3030580A JPS56126940A JP S56126940 A JPS56126940 A JP S56126940A JP 3030580 A JP3030580 A JP 3030580A JP 3030580 A JP3030580 A JP 3030580A JP S56126940 A JPS56126940 A JP S56126940A
Authority
JP
Japan
Prior art keywords
poly
thick film
thick
capacitance
sio22
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3030580A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3030580A priority Critical patent/JPS56126940A/en
Publication of JPS56126940A publication Critical patent/JPS56126940A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a semiconductor device with less steps on the surface of a semiconductor substrate containing a capacitance element for accumulating electric charge through an effective combination of a thick film and a thin film of a conductive poly Si and SiO2 on a part of the surface. CONSTITUTION:An SiO22 of 1,000Angstrom and a poly Si3 about 0.6mum thick added to by P at a high concentration are stacked on an N type Si substrate 1. With an Si3N4 mask 4 applied, an ion is injected thereinto to make a channel stopper 5. Then, the poly Si3 is selectively oxidized to make an SiO2 thick film 6 of about 6,000Angstrom for isolating elements. A poly Si33 about 0.2mum thick is left beneath the thick film 6. Then, the mask 4 is removed away by plasma ethcing and the poly Si3 not covered with the thick film 6 is subjected to a selective plasma etching. Concequently, one electrode 31 for a charge accumulating capacitance is formed along a part of the thick film 6 and an active layer. The SiO22 exposed is etched away and an SiO27 is made on a gate oxide 7 of about 1,000Angstrom and the poly Si3 over the substrate surface exposed. An electrode 32 for the capacitance is selectively provided and covered with an SiO212 on which is wired. This structure can lessen steps on the surface thereby preventing disconnection.
JP3030580A 1980-03-12 1980-03-12 Semiconductor device Pending JPS56126940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3030580A JPS56126940A (en) 1980-03-12 1980-03-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3030580A JPS56126940A (en) 1980-03-12 1980-03-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56126940A true JPS56126940A (en) 1981-10-05

Family

ID=12300037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3030580A Pending JPS56126940A (en) 1980-03-12 1980-03-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56126940A (en)

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