JPS56124229A - Manufacture of thin film - Google Patents

Manufacture of thin film

Info

Publication number
JPS56124229A
JPS56124229A JP2833380A JP2833380A JPS56124229A JP S56124229 A JPS56124229 A JP S56124229A JP 2833380 A JP2833380 A JP 2833380A JP 2833380 A JP2833380 A JP 2833380A JP S56124229 A JPS56124229 A JP S56124229A
Authority
JP
Japan
Prior art keywords
light
coupling
wavelength
coupling type
absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2833380A
Other languages
Japanese (ja)
Other versions
JPS637020B2 (en
Inventor
Shinichiro Ishihara
Koshiro Mori
Tsuneo Tanaka
Seiichi Nagata
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2833380A priority Critical patent/JPS56124229A/en
Publication of JPS56124229A publication Critical patent/JPS56124229A/en
Publication of JPS637020B2 publication Critical patent/JPS637020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the characteristics of an amorphous Si remarkably by a method wherein a certain specific coupling type absorption of an Si and an H is utilized and this is changed into a coupling type giving no inffuence to its characteristics with the aid of a direct method. CONSTITUTION:An SiH4 diluted by an Ar is induced in an evacuating device 2. A substrate 3 is heated up 4 and is discharged by giving a high frequency from an electrode 1. The substrate or a raw gas is irradiated by the light source 10 having the wavelength within the prescribed range. There exists an absorption peak in the coupling of the Si and H in the amorphous Si for the light having a specific wavelength. For example, in the case where the coupling type of an Si-H2 is desired to be removed, the light having the wavelength of 2,100cm<-1>, 900cm<-1> and 850cm<-1> can be used. Through said method, the uncoupling into the Si-H2, Si-H or H can be performed by irradiating the light having the necesary energy to obtain the desired H and by utilizing the absorption due to the resonance vibration generated by the coupling of the Si and H.
JP2833380A 1980-03-05 1980-03-05 Manufacture of thin film Granted JPS56124229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2833380A JPS56124229A (en) 1980-03-05 1980-03-05 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2833380A JPS56124229A (en) 1980-03-05 1980-03-05 Manufacture of thin film

Publications (2)

Publication Number Publication Date
JPS56124229A true JPS56124229A (en) 1981-09-29
JPS637020B2 JPS637020B2 (en) 1988-02-15

Family

ID=12245675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2833380A Granted JPS56124229A (en) 1980-03-05 1980-03-05 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS56124229A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823434A (en) * 1981-08-04 1983-02-12 Kanegafuchi Chem Ind Co Ltd Amorphous silicon semiconductor
JPS5973045A (en) * 1982-10-19 1984-04-25 Inoue Japax Res Inc Surface coating method
JPS59127833A (en) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol Thin film manufacturing device according to excited vapor phase deposition
JPS59177919A (en) * 1983-03-28 1984-10-08 Nippon Telegr & Teleph Corp <Ntt> Selective growth of thin film
FR2548218A1 (en) * 1983-06-29 1985-01-04 Pauleau Yves Process for deposition of thin layers by gas phase chemical reaction employing two different radiations
JPS6027122A (en) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd Method of photo plasma gas phase reaction
JPS6027123A (en) * 1983-07-25 1985-02-12 Semiconductor Energy Lab Co Ltd Method of photo plasma gas phase reaction
JPS6027767A (en) * 1983-07-27 1985-02-12 Suzuki Motor Co Ltd Fuel regulator for carburetor
JPS6027121A (en) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd Photo chemical vapor deposition device
JPS60175411A (en) * 1984-02-22 1985-09-09 Hitachi Ltd Manufacture of thin semiconductor film and apparatus thereof
JPS60236219A (en) * 1984-04-25 1985-11-25 テキサス　インスツルメンツ　インコーポレイテツド Depositing method and device using plasma produced source gas
JPH05190473A (en) * 1992-06-03 1993-07-30 Semiconductor Energy Lab Co Ltd Photo cvd apparatus
CN102496663A (en) * 2011-12-29 2012-06-13 普乐新能源（蚌埠）有限公司 Method for reducing attenuation rate of amorphous silicon solar cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244562A (en) * 1975-10-07 1977-04-07 Fujitsu Ltd Epitaxial growth method
JPS53103985A (en) * 1977-02-22 1978-09-09 Kokusai Electric Co Ltd Growing film forming method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5244562A (en) * 1975-10-07 1977-04-07 Fujitsu Ltd Epitaxial growth method
JPS53103985A (en) * 1977-02-22 1978-09-09 Kokusai Electric Co Ltd Growing film forming method

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823434A (en) * 1981-08-04 1983-02-12 Kanegafuchi Chem Ind Co Ltd Amorphous silicon semiconductor
JPH0447453B2 (en) * 1981-08-04 1992-08-04 Kanegafuchi Chemical Ind
JPH0340107B2 (en) * 1982-10-19 1991-06-17
JPS5973045A (en) * 1982-10-19 1984-04-25 Inoue Japax Res Inc Surface coating method
JPS59127833A (en) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol Thin film manufacturing device according to excited vapor phase deposition
JPH0419702B2 (en) * 1983-01-12 1992-03-31 Kogyo Gijutsuin
JPS59177919A (en) * 1983-03-28 1984-10-08 Nippon Telegr & Teleph Corp <Ntt> Selective growth of thin film
FR2548218A1 (en) * 1983-06-29 1985-01-04 Pauleau Yves Process for deposition of thin layers by gas phase chemical reaction employing two different radiations
JPS6027121A (en) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd Photo chemical vapor deposition device
JPS6027122A (en) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd Method of photo plasma gas phase reaction
JPH0463536B2 (en) * 1983-07-22 1992-10-12 Handotai Energy Kenkyusho
JPS6027123A (en) * 1983-07-25 1985-02-12 Semiconductor Energy Lab Co Ltd Method of photo plasma gas phase reaction
JPH0557732B2 (en) * 1983-07-25 1993-08-24 Handotai Energy Kenkyusho
JPS6027767A (en) * 1983-07-27 1985-02-12 Suzuki Motor Co Ltd Fuel regulator for carburetor
JPS60175411A (en) * 1984-02-22 1985-09-09 Hitachi Ltd Manufacture of thin semiconductor film and apparatus thereof
JPS60236219A (en) * 1984-04-25 1985-11-25 テキサス　インスツルメンツ　インコーポレイテツド Depositing method and device using plasma produced source gas
JPH0573050B2 (en) * 1984-04-25 1993-10-13 Texas Instruments Inc
JPH05190473A (en) * 1992-06-03 1993-07-30 Semiconductor Energy Lab Co Ltd Photo cvd apparatus
CN102496663A (en) * 2011-12-29 2012-06-13 普乐新能源（蚌埠）有限公司 Method for reducing attenuation rate of amorphous silicon solar cell

Also Published As

Publication number Publication date
JPS637020B2 (en) 1988-02-15

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