JPS56100412A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56100412A
JPS56100412A JP16374679A JP16374679A JPS56100412A JP S56100412 A JPS56100412 A JP S56100412A JP 16374679 A JP16374679 A JP 16374679A JP 16374679 A JP16374679 A JP 16374679A JP S56100412 A JPS56100412 A JP S56100412A
Authority
JP
Japan
Prior art keywords
wafer
activation
ions
board
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16374679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS614173B2 (https=
Inventor
Kazuo Nishiyama
Tetsunosuke Yanada
Michio Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP16374679A priority Critical patent/JPS56100412A/ja
Priority to GB8039713A priority patent/GB2065973B/en
Priority to NL8006759A priority patent/NL191621C/xx
Priority to US06/216,273 priority patent/US4482393A/en
Priority to CA000366877A priority patent/CA1143867A/en
Priority to FR8026708A priority patent/FR2473787B1/fr
Priority to DE19803047297 priority patent/DE3047297A1/de
Publication of JPS56100412A publication Critical patent/JPS56100412A/ja
Publication of JPS614173B2 publication Critical patent/JPS614173B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP16374679A 1979-12-17 1979-12-17 Manufacture of semiconductor device Granted JPS56100412A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP16374679A JPS56100412A (en) 1979-12-17 1979-12-17 Manufacture of semiconductor device
GB8039713A GB2065973B (en) 1979-12-17 1980-12-11 Processes for manufacturing semiconductor devices
NL8006759A NL191621C (nl) 1979-12-17 1980-12-12 Werkwijze voor het maken van een halfgeleiderinrichting.
US06/216,273 US4482393A (en) 1979-12-17 1980-12-15 Method of activating implanted ions by incoherent light beam
CA000366877A CA1143867A (en) 1979-12-17 1980-12-16 Process for manufacturing a semiconductor device
FR8026708A FR2473787B1 (fr) 1979-12-17 1980-12-16 Procede de fabrication d'un composant semi-conducteur par implantation ionique d'impuretes dans un support
DE19803047297 DE3047297A1 (de) 1979-12-17 1980-12-16 Verfahren zur herstellung von halbleiterbauelementen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374679A JPS56100412A (en) 1979-12-17 1979-12-17 Manufacture of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60196922A Division JPS61198625A (ja) 1985-09-06 1985-09-06 半導体装置の製法及びそれに使用する赤外線ランプ加熱装置

Publications (2)

Publication Number Publication Date
JPS56100412A true JPS56100412A (en) 1981-08-12
JPS614173B2 JPS614173B2 (https=) 1986-02-07

Family

ID=15779889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16374679A Granted JPS56100412A (en) 1979-12-17 1979-12-17 Manufacture of semiconductor device

Country Status (7)

Country Link
US (1) US4482393A (https=)
JP (1) JPS56100412A (https=)
CA (1) CA1143867A (https=)
DE (1) DE3047297A1 (https=)
FR (1) FR2473787B1 (https=)
GB (1) GB2065973B (https=)
NL (1) NL191621C (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186933A (ja) * 1982-04-23 1983-11-01 Sharp Corp 半導体素子の製造方法
JPS5939927U (ja) * 1982-09-07 1984-03-14 株式会社日立国際電気 薄膜生成装置の基板加熱装置
JPS5984422A (ja) * 1982-11-04 1984-05-16 Pioneer Electronic Corp 半導体装置の製造方法
JPS6037776A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JPS6077419A (ja) * 1983-10-04 1985-05-02 Seiko Epson Corp 半導体装置の製造方法
JPS6085512A (ja) * 1983-10-18 1985-05-15 Seiko Epson Corp 半導体装置の製造方法
JPS60257089A (ja) * 1984-05-31 1985-12-18 ニチデン機械株式会社 赤外線加熱装置
JPS6122634A (ja) * 1984-07-10 1986-01-31 Matsushita Electric Ind Co Ltd 赤外線ランプアニ−ル装置
JPS62226671A (ja) * 1986-03-24 1987-10-05 エバラ　ソーラー　インコーポレイテッド 半導体の接合形成方法
JPH0629316A (ja) * 1993-01-18 1994-02-04 Seiko Epson Corp 半導体装置の製造方法
JPH0750344A (ja) * 1994-08-23 1995-02-21 Seiko Epson Corp 半導体装置の製造方法
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JP2018200971A (ja) * 2017-05-29 2018-12-20 ウシオ電機株式会社 光加熱装置

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
GB2136937A (en) * 1983-03-18 1984-09-26 Philips Electronic Associated A furnace for rapidly heating semiconductor bodies
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4732866A (en) * 1984-03-12 1988-03-22 Motorola Inc. Method for producing low noise, high grade constant semiconductor junctions
US4576652A (en) * 1984-07-12 1986-03-18 International Business Machines Corporation Incoherent light annealing of gallium arsenide substrate
GB8418063D0 (en) * 1984-07-16 1984-08-22 Atomic Energy Authority Uk Temperature control in vacuum
US4566913A (en) * 1984-07-30 1986-01-28 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced electron trapping
US4617066A (en) * 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
JPS61219133A (ja) * 1985-03-25 1986-09-29 Sony Corp 光照射アニ−ル装置
US4621413A (en) * 1985-06-03 1986-11-11 Motorola, Inc. Fabricating a semiconductor device with reduced gate leakage
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
JPS62128525A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 化合物半導体基板のアニ−ル方法
FR2594529B1 (fr) * 1986-02-19 1990-01-26 Bertin & Cie Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
US4751193A (en) * 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
FR2605647B1 (fr) * 1986-10-27 1993-01-29 Nissim Yves Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
US4981815A (en) * 1988-05-09 1991-01-01 Siemens Aktiengesellschaft Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors
US4916082A (en) * 1989-03-14 1990-04-10 Motorola Inc. Method of preventing dielectric degradation or rupture
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
US5155337A (en) * 1989-12-21 1992-10-13 North Carolina State University Method and apparatus for controlling rapid thermal processing systems
US5215588A (en) * 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
US5561735A (en) * 1994-08-30 1996-10-01 Vortek Industries Ltd. Rapid thermal processing apparatus and method
US5795627A (en) * 1997-02-14 1998-08-18 Advanced Micro Devices, Inc. Method for annealing damaged semiconductor regions allowing for enhanced oxide growth
US6040019A (en) * 1997-02-14 2000-03-21 Advanced Micro Devices, Inc. Method of selectively annealing damaged doped regions
US5904575A (en) * 1997-02-14 1999-05-18 Advanced Micro Devices, Inc. Method and apparatus incorporating nitrogen selectively for differential oxide growth
JP3450163B2 (ja) * 1997-09-12 2003-09-22 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6174388B1 (en) 1999-03-15 2001-01-16 Lockheed Martin Energy Research Corp. Rapid infrared heating of a surface
US6303411B1 (en) 1999-05-03 2001-10-16 Vortek Industries Ltd. Spatially resolved temperature measurement and irradiance control
US6496648B1 (en) 1999-08-19 2002-12-17 Prodeo Technologies, Inc. Apparatus and method for rapid thermal processing
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
US7445382B2 (en) 2001-12-26 2008-11-04 Mattson Technology Canada, Inc. Temperature measurement and heat-treating methods and system
AU2003287837A1 (en) 2002-12-20 2004-07-14 Vortek Industries Ltd Methods and systems for supporting a workpiece and for heat-treating the workpiece
JP5630935B2 (ja) 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
US7781947B2 (en) 2004-02-12 2010-08-24 Mattson Technology Canada, Inc. Apparatus and methods for producing electromagnetic radiation
US7133604B1 (en) 2005-10-20 2006-11-07 Bergstein David M Infrared air heater with multiple light sources and reflective enclosure
JP5967859B2 (ja) 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
WO2009137940A1 (en) 2008-05-16 2009-11-19 Mattson Technology Canada, Inc. Workpiece breakage prevention method and apparatus
KR102434364B1 (ko) * 2013-09-06 2022-08-19 어플라이드 머티어리얼스, 인코포레이티드 원형 램프 어레이들
US10669430B2 (en) * 2018-07-17 2020-06-02 Varian Semiconductor Equipment Associates, Inc. Anti-reflective coating for transparent end effectors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3692572A (en) * 1969-08-12 1972-09-19 Wolfgang Strehlow Epitaxial film process and products thereof
US3763348A (en) * 1972-01-05 1973-10-02 Argus Eng Co Apparatus and method for uniform illumination of a surface
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4081313A (en) * 1975-01-24 1978-03-28 Applied Materials, Inc. Process for preparing semiconductor wafers with substantially no crystallographic slip
JPS5577145A (en) * 1978-12-05 1980-06-10 Ushio Inc Annealing furnace
US4229232A (en) * 1978-12-11 1980-10-21 Spire Corporation Method involving pulsed beam processing of metallic and dielectric materials
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58186933A (ja) * 1982-04-23 1983-11-01 Sharp Corp 半導体素子の製造方法
JPS5939927U (ja) * 1982-09-07 1984-03-14 株式会社日立国際電気 薄膜生成装置の基板加熱装置
JPS5984422A (ja) * 1982-11-04 1984-05-16 Pioneer Electronic Corp 半導体装置の製造方法
JPS6037776A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JPS6077419A (ja) * 1983-10-04 1985-05-02 Seiko Epson Corp 半導体装置の製造方法
JPS6085512A (ja) * 1983-10-18 1985-05-15 Seiko Epson Corp 半導体装置の製造方法
JPS60257089A (ja) * 1984-05-31 1985-12-18 ニチデン機械株式会社 赤外線加熱装置
JPS6122634A (ja) * 1984-07-10 1986-01-31 Matsushita Electric Ind Co Ltd 赤外線ランプアニ−ル装置
JPS62226671A (ja) * 1986-03-24 1987-10-05 エバラ　ソーラー　インコーポレイテッド 半導体の接合形成方法
JPH0629316A (ja) * 1993-01-18 1994-02-04 Seiko Epson Corp 半導体装置の製造方法
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same
JPH0750344A (ja) * 1994-08-23 1995-02-21 Seiko Epson Corp 半導体装置の製造方法
JP2018200971A (ja) * 2017-05-29 2018-12-20 ウシオ電機株式会社 光加熱装置

Also Published As

Publication number Publication date
FR2473787B1 (fr) 1985-10-25
NL191621C (nl) 1995-11-06
US4482393A (en) 1984-11-13
CA1143867A (en) 1983-03-29
JPS614173B2 (https=) 1986-02-07
GB2065973A (en) 1981-07-01
GB2065973B (en) 1983-11-23
NL8006759A (nl) 1981-07-16
FR2473787A1 (fr) 1981-07-17
DE3047297A1 (de) 1981-09-17
NL191621B (nl) 1995-07-03
DE3047297C2 (https=) 1993-04-01

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