FR2473787B1 - Procede de fabrication d'un composant semi-conducteur par implantation ionique d'impuretes dans un support - Google Patents
Procede de fabrication d'un composant semi-conducteur par implantation ionique d'impuretes dans un supportInfo
- Publication number
- FR2473787B1 FR2473787B1 FR8026708A FR8026708A FR2473787B1 FR 2473787 B1 FR2473787 B1 FR 2473787B1 FR 8026708 A FR8026708 A FR 8026708A FR 8026708 A FR8026708 A FR 8026708A FR 2473787 B1 FR2473787 B1 FR 2473787B1
- Authority
- FR
- France
- Prior art keywords
- impurities
- manufacturing
- support
- ion implantation
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16374679A JPS56100412A (en) | 1979-12-17 | 1979-12-17 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2473787A1 FR2473787A1 (fr) | 1981-07-17 |
FR2473787B1 true FR2473787B1 (fr) | 1985-10-25 |
Family
ID=15779889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8026708A Expired FR2473787B1 (fr) | 1979-12-17 | 1980-12-16 | Procede de fabrication d'un composant semi-conducteur par implantation ionique d'impuretes dans un support |
Country Status (7)
Country | Link |
---|---|
US (1) | US4482393A (fr) |
JP (1) | JPS56100412A (fr) |
CA (1) | CA1143867A (fr) |
DE (1) | DE3047297A1 (fr) |
FR (1) | FR2473787B1 (fr) |
GB (1) | GB2065973B (fr) |
NL (1) | NL191621C (fr) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5750427A (en) * | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
JPS58186933A (ja) * | 1982-04-23 | 1983-11-01 | Sharp Corp | 半導体素子の製造方法 |
JPS5939927U (ja) * | 1982-09-07 | 1984-03-14 | 株式会社日立国際電気 | 薄膜生成装置の基板加熱装置 |
JPS5984422A (ja) * | 1982-11-04 | 1984-05-16 | Pioneer Electronic Corp | 半導体装置の製造方法 |
GB2136937A (en) * | 1983-03-18 | 1984-09-26 | Philips Electronic Associated | A furnace for rapidly heating semiconductor bodies |
JPH0666330B2 (ja) * | 1983-08-10 | 1994-08-24 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JPS6077419A (ja) * | 1983-10-04 | 1985-05-02 | Seiko Epson Corp | 半導体装置の製造方法 |
JPS6085512A (ja) * | 1983-10-18 | 1985-05-15 | Seiko Epson Corp | 半導体装置の製造方法 |
US4698486A (en) * | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4732866A (en) * | 1984-03-12 | 1988-03-22 | Motorola Inc. | Method for producing low noise, high grade constant semiconductor junctions |
JPS60257089A (ja) * | 1984-05-31 | 1985-12-18 | ニチデン機械株式会社 | 赤外線加熱装置 |
JPS6122634A (ja) * | 1984-07-10 | 1986-01-31 | Matsushita Electric Ind Co Ltd | 赤外線ランプアニ−ル装置 |
US4576652A (en) * | 1984-07-12 | 1986-03-18 | International Business Machines Corporation | Incoherent light annealing of gallium arsenide substrate |
GB8418063D0 (en) * | 1984-07-16 | 1984-08-22 | Atomic Energy Authority Uk | Temperature control in vacuum |
US4566913A (en) * | 1984-07-30 | 1986-01-28 | International Business Machines Corporation | Rapid thermal annealing of silicon dioxide for reduced electron trapping |
US4617066A (en) * | 1984-11-26 | 1986-10-14 | Hughes Aircraft Company | Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing |
JPS61219133A (ja) * | 1985-03-25 | 1986-09-29 | Sony Corp | 光照射アニ−ル装置 |
US4621413A (en) * | 1985-06-03 | 1986-11-11 | Motorola, Inc. | Fabricating a semiconductor device with reduced gate leakage |
US5753542A (en) * | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
JPS62128525A (ja) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | 化合物半導体基板のアニ−ル方法 |
FR2594529B1 (fr) * | 1986-02-19 | 1990-01-26 | Bertin & Cie | Appareil pour traitements thermiques de pieces minces, telles que des plaquettes de silicium |
US4729962A (en) * | 1986-03-24 | 1988-03-08 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor junction formation by directed heat |
US5514885A (en) * | 1986-10-09 | 1996-05-07 | Myrick; James J. | SOI methods and apparatus |
US4751193A (en) * | 1986-10-09 | 1988-06-14 | Q-Dot, Inc. | Method of making SOI recrystallized layers by short spatially uniform light pulses |
FR2605647B1 (fr) * | 1986-10-27 | 1993-01-29 | Nissim Yves | Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
US4916082A (en) * | 1989-03-14 | 1990-04-10 | Motorola Inc. | Method of preventing dielectric degradation or rupture |
US5017508A (en) * | 1989-06-29 | 1991-05-21 | Ixys Corporation | Method of annealing fully-fabricated, radiation damaged semiconductor devices |
US5155337A (en) * | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
JP2534608B2 (ja) * | 1993-01-18 | 1996-09-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3173926B2 (ja) | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
JP2601209B2 (ja) * | 1994-08-23 | 1997-04-16 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US5561735A (en) * | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5904575A (en) * | 1997-02-14 | 1999-05-18 | Advanced Micro Devices, Inc. | Method and apparatus incorporating nitrogen selectively for differential oxide growth |
US5795627A (en) * | 1997-02-14 | 1998-08-18 | Advanced Micro Devices, Inc. | Method for annealing damaged semiconductor regions allowing for enhanced oxide growth |
US6040019A (en) * | 1997-02-14 | 2000-03-21 | Advanced Micro Devices, Inc. | Method of selectively annealing damaged doped regions |
JP3450163B2 (ja) * | 1997-09-12 | 2003-09-22 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6174388B1 (en) | 1999-03-15 | 2001-01-16 | Lockheed Martin Energy Research Corp. | Rapid infrared heating of a surface |
US6303411B1 (en) | 1999-05-03 | 2001-10-16 | Vortek Industries Ltd. | Spatially resolved temperature measurement and irradiance control |
US6496648B1 (en) | 1999-08-19 | 2002-12-17 | Prodeo Technologies, Inc. | Apparatus and method for rapid thermal processing |
US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
CN100416243C (zh) | 2001-12-26 | 2008-09-03 | 加拿大马特森技术有限公司 | 测量温度和热处理的方法及系统 |
US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
WO2005059991A1 (fr) | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Appareils et procedes pour supprimer un mouvement d'origine thermique d'une piece |
US7781947B2 (en) | 2004-02-12 | 2010-08-24 | Mattson Technology Canada, Inc. | Apparatus and methods for producing electromagnetic radiation |
US7133604B1 (en) * | 2005-10-20 | 2006-11-07 | Bergstein David M | Infrared air heater with multiple light sources and reflective enclosure |
US8454356B2 (en) | 2006-11-15 | 2013-06-04 | Mattson Technology, Inc. | Systems and methods for supporting a workpiece during heat-treating |
KR101610269B1 (ko) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | 워크피스 파손 방지 방법 및 장치 |
KR102618822B1 (ko) * | 2013-09-06 | 2023-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 원형 램프 어레이들 |
JP6916988B2 (ja) * | 2017-05-29 | 2021-08-11 | ウシオ電機株式会社 | 光加熱装置 |
US10669430B2 (en) * | 2018-07-17 | 2020-06-02 | Varian Semiconductor Equipment Associates, Inc. | Anti-reflective coating for transparent end effectors |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3692572A (en) * | 1969-08-12 | 1972-09-19 | Wolfgang Strehlow | Epitaxial film process and products thereof |
US3763348A (en) * | 1972-01-05 | 1973-10-02 | Argus Eng Co | Apparatus and method for uniform illumination of a surface |
US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
US4151008A (en) * | 1974-11-15 | 1979-04-24 | Spire Corporation | Method involving pulsed light processing of semiconductor devices |
US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
JPS5577145A (en) * | 1978-12-05 | 1980-06-10 | Ushio Inc | Annealing furnace |
US4229232A (en) * | 1978-12-11 | 1980-10-21 | Spire Corporation | Method involving pulsed beam processing of metallic and dielectric materials |
US4331485A (en) * | 1980-03-03 | 1982-05-25 | Arnon Gat | Method for heat treating semiconductor material using high intensity CW lamps |
-
1979
- 1979-12-17 JP JP16374679A patent/JPS56100412A/ja active Granted
-
1980
- 1980-12-11 GB GB8039713A patent/GB2065973B/en not_active Expired
- 1980-12-12 NL NL8006759A patent/NL191621C/xx not_active IP Right Cessation
- 1980-12-15 US US06/216,273 patent/US4482393A/en not_active Expired - Lifetime
- 1980-12-16 DE DE19803047297 patent/DE3047297A1/de active Granted
- 1980-12-16 CA CA000366877A patent/CA1143867A/fr not_active Expired
- 1980-12-16 FR FR8026708A patent/FR2473787B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS614173B2 (fr) | 1986-02-07 |
GB2065973B (en) | 1983-11-23 |
NL191621B (nl) | 1995-07-03 |
US4482393A (en) | 1984-11-13 |
NL8006759A (nl) | 1981-07-16 |
GB2065973A (en) | 1981-07-01 |
CA1143867A (fr) | 1983-03-29 |
DE3047297A1 (de) | 1981-09-17 |
DE3047297C2 (fr) | 1993-04-01 |
NL191621C (nl) | 1995-11-06 |
FR2473787A1 (fr) | 1981-07-17 |
JPS56100412A (en) | 1981-08-12 |
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