JPS5524454A - Insulating gate type field effect transistor - Google Patents

Insulating gate type field effect transistor

Info

Publication number
JPS5524454A
JPS5524454A JP9706978A JP9706978A JPS5524454A JP S5524454 A JPS5524454 A JP S5524454A JP 9706978 A JP9706978 A JP 9706978A JP 9706978 A JP9706978 A JP 9706978A JP S5524454 A JPS5524454 A JP S5524454A
Authority
JP
Japan
Prior art keywords
melting point
nitride
gate electrode
high melting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9706978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6327864B2 (enrdf_load_stackoverflow
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9706978A priority Critical patent/JPS5524454A/ja
Publication of JPS5524454A publication Critical patent/JPS5524454A/ja
Publication of JPS6327864B2 publication Critical patent/JPS6327864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9706978A 1978-08-08 1978-08-08 Insulating gate type field effect transistor Granted JPS5524454A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9706978A JPS5524454A (en) 1978-08-08 1978-08-08 Insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9706978A JPS5524454A (en) 1978-08-08 1978-08-08 Insulating gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5524454A true JPS5524454A (en) 1980-02-21
JPS6327864B2 JPS6327864B2 (enrdf_load_stackoverflow) 1988-06-06

Family

ID=14182345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9706978A Granted JPS5524454A (en) 1978-08-08 1978-08-08 Insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5524454A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877257A (ja) * 1981-11-04 1983-05-10 Hitachi Ltd 超高信頼性電極
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ
JPS63174371A (ja) * 1987-01-13 1988-07-18 Nec Corp 電界効果トランジスタ
US7816191B2 (en) 1999-06-29 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7906429B2 (en) * 1999-06-22 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (enrdf_load_stackoverflow) * 1973-05-18 1975-01-25
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507430A (enrdf_load_stackoverflow) * 1973-05-18 1975-01-25
JPS5365088A (en) * 1976-11-22 1978-06-10 Nec Corp Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877257A (ja) * 1981-11-04 1983-05-10 Hitachi Ltd 超高信頼性電極
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
US4605947A (en) * 1983-03-07 1986-08-12 Motorola Inc. Titanium nitride MOS device gate electrode and method of producing
JPS6254960A (ja) * 1985-09-04 1987-03-10 Nec Corp Ｍｉｓ形電界効果トランジスタ
JPS63174371A (ja) * 1987-01-13 1988-07-18 Nec Corp 電界効果トランジスタ
US7906429B2 (en) * 1999-06-22 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US8357611B2 (en) 1999-06-22 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US9660159B2 (en) 1999-06-22 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7816191B2 (en) 1999-06-29 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof

Also Published As

Publication number Publication date
JPS6327864B2 (enrdf_load_stackoverflow) 1988-06-06

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