JPS6327864B2 - - Google Patents
Info
- Publication number
- JPS6327864B2 JPS6327864B2 JP53097069A JP9706978A JPS6327864B2 JP S6327864 B2 JPS6327864 B2 JP S6327864B2 JP 53097069 A JP53097069 A JP 53097069A JP 9706978 A JP9706978 A JP 9706978A JP S6327864 B2 JPS6327864 B2 JP S6327864B2
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- gate
- film
- tungsten
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9706978A JPS5524454A (en) | 1978-08-08 | 1978-08-08 | Insulating gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9706978A JPS5524454A (en) | 1978-08-08 | 1978-08-08 | Insulating gate type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5524454A JPS5524454A (en) | 1980-02-21 |
JPS6327864B2 true JPS6327864B2 (enrdf_load_stackoverflow) | 1988-06-06 |
Family
ID=14182345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9706978A Granted JPS5524454A (en) | 1978-08-08 | 1978-08-08 | Insulating gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524454A (enrdf_load_stackoverflow) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5877257A (ja) * | 1981-11-04 | 1983-05-10 | Hitachi Ltd | 超高信頼性電極 |
US4570328A (en) * | 1983-03-07 | 1986-02-18 | Motorola, Inc. | Method of producing titanium nitride MOS device gate electrode |
US4605947A (en) * | 1983-03-07 | 1986-08-12 | Motorola Inc. | Titanium nitride MOS device gate electrode and method of producing |
JPS6254960A (ja) * | 1985-09-04 | 1987-03-10 | Nec Corp | Mis形電界効果トランジスタ |
JPS63174371A (ja) * | 1987-01-13 | 1988-07-18 | Nec Corp | 電界効果トランジスタ |
US7245018B1 (en) | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
US6661096B1 (en) | 1999-06-29 | 2003-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507430A (enrdf_load_stackoverflow) * | 1973-05-18 | 1975-01-25 | ||
JPS5365088A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Semiconductor device |
-
1978
- 1978-08-08 JP JP9706978A patent/JPS5524454A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5524454A (en) | 1980-02-21 |
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