JPS5521553A - Device for fabricating film - Google Patents

Device for fabricating film

Info

Publication number
JPS5521553A
JPS5521553A JP9396678A JP9396678A JPS5521553A JP S5521553 A JPS5521553 A JP S5521553A JP 9396678 A JP9396678 A JP 9396678A JP 9396678 A JP9396678 A JP 9396678A JP S5521553 A JPS5521553 A JP S5521553A
Authority
JP
Japan
Prior art keywords
film
chamber
substrate
vacuum
jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9396678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6123270B2 (enExample
Inventor
Yoshihiro Hirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP9396678A priority Critical patent/JPS5521553A/ja
Publication of JPS5521553A publication Critical patent/JPS5521553A/ja
Publication of JPS6123270B2 publication Critical patent/JPS6123270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP9396678A 1978-08-01 1978-08-01 Device for fabricating film Granted JPS5521553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9396678A JPS5521553A (en) 1978-08-01 1978-08-01 Device for fabricating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9396678A JPS5521553A (en) 1978-08-01 1978-08-01 Device for fabricating film

Publications (2)

Publication Number Publication Date
JPS5521553A true JPS5521553A (en) 1980-02-15
JPS6123270B2 JPS6123270B2 (enExample) 1986-06-05

Family

ID=14097137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9396678A Granted JPS5521553A (en) 1978-08-01 1978-08-01 Device for fabricating film

Country Status (1)

Country Link
JP (1) JPS5521553A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140333A (ja) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd プラズマ処理装置のクリーニング方法
JPH08195348A (ja) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPH08241867A (ja) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd プラズマ処理装置およびプラズマ処理方法
KR100390576B1 (ko) * 2001-07-31 2003-07-07 한국과학기술원 박막제조장치
WO2018105427A1 (ja) * 2016-12-06 2018-06-14 東京エレクトロン株式会社 基板上に膜を形成する方法、及び、成膜システム

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014997A (enExample) * 1973-06-13 1975-02-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5014997A (enExample) * 1973-06-13 1975-02-17

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06140333A (ja) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd プラズマ処理装置のクリーニング方法
JPH08195348A (ja) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPH08241867A (ja) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd プラズマ処理装置およびプラズマ処理方法
KR100390576B1 (ko) * 2001-07-31 2003-07-07 한국과학기술원 박막제조장치
WO2018105427A1 (ja) * 2016-12-06 2018-06-14 東京エレクトロン株式会社 基板上に膜を形成する方法、及び、成膜システム

Also Published As

Publication number Publication date
JPS6123270B2 (enExample) 1986-06-05

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