JPS5518049A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5518049A
JPS5518049A JP9105378A JP9105378A JPS5518049A JP S5518049 A JPS5518049 A JP S5518049A JP 9105378 A JP9105378 A JP 9105378A JP 9105378 A JP9105378 A JP 9105378A JP S5518049 A JPS5518049 A JP S5518049A
Authority
JP
Japan
Prior art keywords
region
type
regions
channel
electrostatic induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9105378A
Other languages
Japanese (ja)
Inventor
Saburo Osaki
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9105378A priority Critical patent/JPS5518049A/en
Publication of JPS5518049A publication Critical patent/JPS5518049A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enable high speed operation of a semiconductor device by surrounding the drain region of an electrostatic induction transistor by thick insulating film and channel region to thereby reduce the drain resistance and capacitance so as to improve its gm (mutual conductance). CONSTITUTION:N<-> type semiconductor region 3 is formed on an N+ type semiconductor substrate 1, and with P<+> type regions 5, 6 and N<+> type region 7 exposed on the main surfaces therein. The region 7 is entirely surrounded by an insulating film 28 and a channel forming portion 35 in a manner that P<+> type resion 25 making contact with the region 5 is so buried in the region 3 to face oppositely to the film 28. Thus, a PNP transistor Tr having an emitter of the region 6, a base of the region 3 and collector of regions 5, 25 is formed with such electrostatic induction type semiconductor logic device in a manner that the region 1 operates as a source, the regions 5, 25 as a gate and the portion 35 in the region 3 as a channel with the region 7 as a drain as an electrostatic induction type transistor SIT which is controlled via the gate regions 5, 25 for opening or closing the current passage of the channel portion 35.
JP9105378A 1978-07-25 1978-07-25 Semiconductor device Pending JPS5518049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9105378A JPS5518049A (en) 1978-07-25 1978-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9105378A JPS5518049A (en) 1978-07-25 1978-07-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5518049A true JPS5518049A (en) 1980-02-07

Family

ID=14015755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9105378A Pending JPS5518049A (en) 1978-07-25 1978-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5518049A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334979A (en) * 1986-07-24 1988-02-15 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− Field effect transistor and manufacture of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit
JPS5323583A (en) * 1976-08-17 1978-03-04 Matsushita Electric Ind Co Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit
JPS5323583A (en) * 1976-08-17 1978-03-04 Matsushita Electric Ind Co Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6334979A (en) * 1986-07-24 1988-02-15 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− Field effect transistor and manufacture of the same

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