JPS5518051A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5518051A
JPS5518051A JP9105578A JP9105578A JPS5518051A JP S5518051 A JPS5518051 A JP S5518051A JP 9105578 A JP9105578 A JP 9105578A JP 9105578 A JP9105578 A JP 9105578A JP S5518051 A JPS5518051 A JP S5518051A
Authority
JP
Japan
Prior art keywords
region
regions
channel
transistor
electrostatic induction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9105578A
Other languages
Japanese (ja)
Inventor
Saburo Osaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9105578A priority Critical patent/JPS5518051A/en
Publication of JPS5518051A publication Critical patent/JPS5518051A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To enable high speed operation of a semiconductor device by surrounding the entire periphery of the drain region of an electrostatic induction type transistor by channel region to thereby reduce the drain resistance and capacitance so as to improve gm (mutual conductance). CONSTITUTION:N<-> type semiconductor region 3 is formed on an N<+> type semiconductor substrate 1, and with P<+> type regions 5, 6 and N<+> type region 7 exposed on the main surfaces therein. The peripheral side surface of the region 7 is surrounded by the portion 35 for forming the channel of the region 3 on the upper surface of the region 2, and P<+> region 25 is buried in contact with the region 5 under the channel portion 35 and region 7. Thus, a PNP transistor having an emitter of the region 6, a base of the region 3 and collector of regions 5, 25 is formed with such electrostatic induction type semiconductor logic device in a manner that the region 1 operates as a source, the regions 5, 25 as a gate and the region 6 as a drain as an electrostatic induction type transistor SIT having the channel portion 35, which transistor is controlled via the gate regions 5, 25 for opening or closing the current passage of the channel portion 35.
JP9105578A 1978-07-25 1978-07-25 Semiconductor device Pending JPS5518051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9105578A JPS5518051A (en) 1978-07-25 1978-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9105578A JPS5518051A (en) 1978-07-25 1978-07-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5518051A true JPS5518051A (en) 1980-02-07

Family

ID=14015810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9105578A Pending JPS5518051A (en) 1978-07-25 1978-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5518051A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223251A (en) * 1975-08-18 1977-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor circuit

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