JPS55166960A - Manufacture of field effect semiconductor device - Google Patents

Manufacture of field effect semiconductor device

Info

Publication number
JPS55166960A
JPS55166960A JP7485979A JP7485979A JPS55166960A JP S55166960 A JPS55166960 A JP S55166960A JP 7485979 A JP7485979 A JP 7485979A JP 7485979 A JP7485979 A JP 7485979A JP S55166960 A JPS55166960 A JP S55166960A
Authority
JP
Japan
Prior art keywords
field effect
gate
semiconductor device
gate oxide
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7485979A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338754B2 (enExample
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7485979A priority Critical patent/JPS55166960A/ja
Publication of JPS55166960A publication Critical patent/JPS55166960A/ja
Publication of JPH0338754B2 publication Critical patent/JPH0338754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP7485979A 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device Granted JPS55166960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7485979A JPS55166960A (en) 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7485979A JPS55166960A (en) 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS55166960A true JPS55166960A (en) 1980-12-26
JPH0338754B2 JPH0338754B2 (enExample) 1991-06-11

Family

ID=13559461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7485979A Granted JPS55166960A (en) 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166960A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635534A (ja) * 1986-06-25 1988-01-11 Matsushita Electronics Corp 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585068A (en) * 1978-12-21 1980-06-26 Sony Corp Preparation of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585068A (en) * 1978-12-21 1980-06-26 Sony Corp Preparation of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635534A (ja) * 1986-06-25 1988-01-11 Matsushita Electronics Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0338754B2 (enExample) 1991-06-11

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