JPH0338754B2 - - Google Patents

Info

Publication number
JPH0338754B2
JPH0338754B2 JP54074859A JP7485979A JPH0338754B2 JP H0338754 B2 JPH0338754 B2 JP H0338754B2 JP 54074859 A JP54074859 A JP 54074859A JP 7485979 A JP7485979 A JP 7485979A JP H0338754 B2 JPH0338754 B2 JP H0338754B2
Authority
JP
Japan
Prior art keywords
gate
oxide film
silicon
film
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54074859A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55166960A (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7485979A priority Critical patent/JPS55166960A/ja
Publication of JPS55166960A publication Critical patent/JPS55166960A/ja
Publication of JPH0338754B2 publication Critical patent/JPH0338754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP7485979A 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device Granted JPS55166960A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7485979A JPS55166960A (en) 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7485979A JPS55166960A (en) 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS55166960A JPS55166960A (en) 1980-12-26
JPH0338754B2 true JPH0338754B2 (enExample) 1991-06-11

Family

ID=13559461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7485979A Granted JPS55166960A (en) 1979-06-14 1979-06-14 Manufacture of field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS55166960A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0727897B2 (ja) * 1986-06-25 1995-03-29 松下電子工業株式会社 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585068A (en) * 1978-12-21 1980-06-26 Sony Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS55166960A (en) 1980-12-26

Similar Documents

Publication Publication Date Title
WO1984004204A1 (en) Method of manufacturing a semiconductor device having small dimensions
JPH025435A (ja) 半導体装置の製造方法
JPS6312168A (ja) Lddmis型電界効果トランジスタ
US4656729A (en) Dual electron injection structure and process with self-limiting oxidation barrier
JPH11274489A (ja) 電界効果トランジスタ及びその製造方法
JPH11103050A (ja) 半導体装置及びその製造方法
US4356041A (en) Method of fabricating a mis-type device by using a gate electrode and selectively implanted nitride layer
JPH0338754B2 (enExample)
JPS605065B2 (ja) Mis形半導体装置の製造方法
KR0170436B1 (ko) 모스트랜지스터 제조방법
JP2681281B2 (ja) Mis電界効果半導体装置の製造方法
JPS60200572A (ja) 半導体装置の製造方法
JPH0481327B2 (enExample)
JP3419956B2 (ja) 半導体装置の製造方法
JP3009683B2 (ja) 半導体不揮発性記憶素子の製造方法
JP3371600B2 (ja) Misトランジスタの製造方法
JPH08162634A (ja) 半導体装置の製造方法
JP2697019B2 (ja) 半導体装置の製造方法
KR960006433B1 (ko) 질소원자의 이온주입에 의한 소자분리막 형성 방법
JP3270187B2 (ja) 半導体集積回路装置における素子分離膜の形成方法
JPH0258771B2 (enExample)
JPH0374842A (ja) 半導体装置の製造方法
JPH0298173A (ja) 半導体記憶装置の製造方法
JPS5821418B2 (ja) 半導体装置の製造方法
JPH04129275A (ja) 半導体装置