JPS55120134A - Apparatus for electron-beam lithography - Google Patents

Apparatus for electron-beam lithography

Info

Publication number
JPS55120134A
JPS55120134A JP2666479A JP2666479A JPS55120134A JP S55120134 A JPS55120134 A JP S55120134A JP 2666479 A JP2666479 A JP 2666479A JP 2666479 A JP2666479 A JP 2666479A JP S55120134 A JPS55120134 A JP S55120134A
Authority
JP
Japan
Prior art keywords
signal
amount
exposing
electron beam
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2666479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6253939B2 (enrdf_load_stackoverflow
Inventor
Masatoshi Utaka
Sumio Hosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2666479A priority Critical patent/JPS55120134A/ja
Publication of JPS55120134A publication Critical patent/JPS55120134A/ja
Publication of JPS6253939B2 publication Critical patent/JPS6253939B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP2666479A 1979-03-09 1979-03-09 Apparatus for electron-beam lithography Granted JPS55120134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2666479A JPS55120134A (en) 1979-03-09 1979-03-09 Apparatus for electron-beam lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2666479A JPS55120134A (en) 1979-03-09 1979-03-09 Apparatus for electron-beam lithography

Publications (2)

Publication Number Publication Date
JPS55120134A true JPS55120134A (en) 1980-09-16
JPS6253939B2 JPS6253939B2 (enrdf_load_stackoverflow) 1987-11-12

Family

ID=12199666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2666479A Granted JPS55120134A (en) 1979-03-09 1979-03-09 Apparatus for electron-beam lithography

Country Status (1)

Country Link
JP (1) JPS55120134A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01278725A (ja) * 1988-05-02 1989-11-09 Fujitsu Ltd 荷電粒子ビーム露光装置
JPH0226015A (ja) * 1988-07-15 1990-01-29 Toshiba Mach Co Ltd 電子ビーム描画方法及び描画装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319653U (enrdf_load_stackoverflow) * 1989-07-05 1991-02-26
JPH0413245U (enrdf_load_stackoverflow) * 1990-05-25 1992-02-03

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01278725A (ja) * 1988-05-02 1989-11-09 Fujitsu Ltd 荷電粒子ビーム露光装置
JPH0226015A (ja) * 1988-07-15 1990-01-29 Toshiba Mach Co Ltd 電子ビーム描画方法及び描画装置

Also Published As

Publication number Publication date
JPS6253939B2 (enrdf_load_stackoverflow) 1987-11-12

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