JPS5679432A - Electron beam exposure process - Google Patents
Electron beam exposure processInfo
- Publication number
- JPS5679432A JPS5679432A JP15708779A JP15708779A JPS5679432A JP S5679432 A JPS5679432 A JP S5679432A JP 15708779 A JP15708779 A JP 15708779A JP 15708779 A JP15708779 A JP 15708779A JP S5679432 A JPS5679432 A JP S5679432A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- deflector
- measured
- control
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To get a correct volume of exposure by a method wherein each of the values of the electric currents of an electron beam having a beltlike section parallel with X-axis and of another electron beam having a beltlike section parallel with Y- axis is measured when a figure to be drawn is shot, and an exposure is made in an independent shot time in response to the measured electric current. CONSTITUTION:Electron beam from an electron gun 1 is fed to a beam variable section device 3 through an injecting pump 2, made to be such an electron beam as having a desired shape of section and a size by a projecting lens 8 and a deflector 10, then projected onto the material 9. With this arrangement, a Faraday cup 22 is closely arranged to the material 9, each of the electric currents of the electron beams parallel with X- and Y-axes, respectively, is measured and the output signal is applied to a computer 17. Then, the output from the computer is fed to the rectangular drawing shot time recording registor 13, X- and Y-trapezoid drawing shot time recording registers 14 and 15 to control a blanking circuit 12, and at the same time to control the deflector 7 in the device 3 through DA transducer 18 and the amplifier 19 as well as to control the deflector 10 through DA transducer 20 and the amplifier 21, respectively.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15708779A JPS5831728B2 (en) | 1979-12-04 | 1979-12-04 | Electron beam exposure method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15708779A JPS5831728B2 (en) | 1979-12-04 | 1979-12-04 | Electron beam exposure method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5679432A true JPS5679432A (en) | 1981-06-30 |
JPS5831728B2 JPS5831728B2 (en) | 1983-07-08 |
Family
ID=15641954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15708779A Expired JPS5831728B2 (en) | 1979-12-04 | 1979-12-04 | Electron beam exposure method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5831728B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739536A (en) * | 1980-08-20 | 1982-03-04 | Matsushita Electronics Corp | Method of electron beam exposure |
JPS593923A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Electron beam exposing method |
JPH01120821A (en) * | 1987-11-04 | 1989-05-12 | Jeol Ltd | Trapezoid lithography device using variable rectangular charged particle beam |
-
1979
- 1979-12-04 JP JP15708779A patent/JPS5831728B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5739536A (en) * | 1980-08-20 | 1982-03-04 | Matsushita Electronics Corp | Method of electron beam exposure |
JPH0334646B2 (en) * | 1980-08-20 | 1991-05-23 | Matsushita Denshi Kogyo Kk | |
JPS593923A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Electron beam exposing method |
JPH0341974B2 (en) * | 1982-06-30 | 1991-06-25 | ||
JPH01120821A (en) * | 1987-11-04 | 1989-05-12 | Jeol Ltd | Trapezoid lithography device using variable rectangular charged particle beam |
Also Published As
Publication number | Publication date |
---|---|
JPS5831728B2 (en) | 1983-07-08 |
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