JPS5752133A - Electron beam exposure apparatus - Google Patents

Electron beam exposure apparatus

Info

Publication number
JPS5752133A
JPS5752133A JP12828880A JP12828880A JPS5752133A JP S5752133 A JPS5752133 A JP S5752133A JP 12828880 A JP12828880 A JP 12828880A JP 12828880 A JP12828880 A JP 12828880A JP S5752133 A JPS5752133 A JP S5752133A
Authority
JP
Japan
Prior art keywords
blur
deflecting electrode
electron beam
reduced
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12828880A
Other languages
Japanese (ja)
Other versions
JPS622454B2 (en
Inventor
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12828880A priority Critical patent/JPS5752133A/en
Publication of JPS5752133A publication Critical patent/JPS5752133A/en
Publication of JPS622454B2 publication Critical patent/JPS622454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To reduce the blur of an electron beam and to accelerate the drawing speed of the beam by forming an annular electron lens producing an axial magnetic field around the first and second apertures and deflecting system. CONSTITUTION:The first and second aperture masks 3, 6 are faced, a deflecting electrode 4 is provided between the masks 3 and 6, and a cylindrical lens 10 is arranged in parallel with a beam emitting direction A around the aperture masks 3, 6 and a deflecting electrode 4. Since it is not necessary to provide the deflecting electrode and a lens between the two apertures in this manner but only the deflecting electrode is necessary, a distance L between the aperture masks can be sufficiently reduced, the blur of the electron beam can be reduced, preferable exposure can be performed, and since the blur of the beam can be reduced, the beam current can be increased, and the drawing speed can be accelerated.
JP12828880A 1980-09-16 1980-09-16 Electron beam exposure apparatus Granted JPS5752133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12828880A JPS5752133A (en) 1980-09-16 1980-09-16 Electron beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12828880A JPS5752133A (en) 1980-09-16 1980-09-16 Electron beam exposure apparatus

Publications (2)

Publication Number Publication Date
JPS5752133A true JPS5752133A (en) 1982-03-27
JPS622454B2 JPS622454B2 (en) 1987-01-20

Family

ID=14981105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12828880A Granted JPS5752133A (en) 1980-09-16 1980-09-16 Electron beam exposure apparatus

Country Status (1)

Country Link
JP (1) JPS5752133A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762000A (en) * 1980-10-01 1982-04-14 Hitachi Ltd Optical device for shaping charged particle beam

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357762A (en) * 1976-11-04 1978-05-25 Fujitsu Ltd Diaphragm for electron beam exposure apparatus
JPS5410679A (en) * 1977-06-25 1979-01-26 Rikagaku Kenkyusho Method of and device for projecting charged particle beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357762A (en) * 1976-11-04 1978-05-25 Fujitsu Ltd Diaphragm for electron beam exposure apparatus
JPS5410679A (en) * 1977-06-25 1979-01-26 Rikagaku Kenkyusho Method of and device for projecting charged particle beam

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762000A (en) * 1980-10-01 1982-04-14 Hitachi Ltd Optical device for shaping charged particle beam
JPS6259458B2 (en) * 1980-10-01 1987-12-11 Hitachi Seisakusho Kk

Also Published As

Publication number Publication date
JPS622454B2 (en) 1987-01-20

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