JPS5632726A - Method for electron beam lithography - Google Patents

Method for electron beam lithography

Info

Publication number
JPS5632726A
JPS5632726A JP10790579A JP10790579A JPS5632726A JP S5632726 A JPS5632726 A JP S5632726A JP 10790579 A JP10790579 A JP 10790579A JP 10790579 A JP10790579 A JP 10790579A JP S5632726 A JPS5632726 A JP S5632726A
Authority
JP
Japan
Prior art keywords
electron beam
electron
sectional area
specimen
cross sectional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10790579A
Other languages
Japanese (ja)
Other versions
JPS5759660B2 (en
Inventor
Hidekazu Goto
Takashi Soma
Masanori Idesawa
Nobuo Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
RIKEN Institute of Physical and Chemical Research
Original Assignee
Jeol Ltd
Nihon Denshi KK
RIKEN Institute of Physical and Chemical Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK, RIKEN Institute of Physical and Chemical Research filed Critical Jeol Ltd
Priority to JP10790579A priority Critical patent/JPS5632726A/en
Publication of JPS5632726A publication Critical patent/JPS5632726A/en
Publication of JPS5759660B2 publication Critical patent/JPS5759660B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To perform highly accurate exposure by varying the cross-sectional area of an electron beam and the electron-beam current density so that the product of the varied cross sectional area of the electron beam and the electron-beam current density on a specimen is approximately constant, and keeping the electron-beam current in the vicinity of the optimum focus. CONSTITUTION:The cross-sectional area of an electron beam is formed so as to have a magnitude corresponding to a pattern Q1 by using masks M1 and M2, a lens 3 between both masks, and a pair of deflectors 5, depending on the command from an electronic computer 4. In this case, a bias power supply S2 is controlled by the command 4, and an electron-beam densiy on a specimen 7 is set at D1. Furthermore, the excitation of a lens 6 is controlled 4 so that the electron beam is focused on the specimen 7 at a current value corresponding to the product of the cross sectional area of the electron beam and D1, and the pattern Q1 is described. Thereafter, the electron beam density is varied in response to the cross sectional area of the electron beam, and the beam is projected so that the product of the cross sectional area and the electron beam current density on the specimen is always kept approximately constant. In this constitution, since the electron beam having almost no blur is projected on the specimen without the readjustment of the projection lens 6, image description can be performed at a constant resolution, and the resusltant highly accurate exposure can be accomplished.
JP10790579A 1979-08-24 1979-08-24 Method for electron beam lithography Granted JPS5632726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10790579A JPS5632726A (en) 1979-08-24 1979-08-24 Method for electron beam lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10790579A JPS5632726A (en) 1979-08-24 1979-08-24 Method for electron beam lithography

Publications (2)

Publication Number Publication Date
JPS5632726A true JPS5632726A (en) 1981-04-02
JPS5759660B2 JPS5759660B2 (en) 1982-12-15

Family

ID=14471030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10790579A Granted JPS5632726A (en) 1979-08-24 1979-08-24 Method for electron beam lithography

Country Status (1)

Country Link
JP (1) JPS5632726A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130550A (en) * 1989-10-23 1992-07-14 Hitachi, Ltd. Electron beam lithography apparatus having device for correcting beam shape
US7485879B2 (en) 2005-07-04 2009-02-03 Nuflare Technology, Inc. Electron beam writing apparatus and writing method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012224537A1 (en) 2012-12-31 2014-07-03 Technische Universität Ilmenau Lithographic process and lithographic device for components and circuits with micro and nano structure dimensions

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130550A (en) * 1989-10-23 1992-07-14 Hitachi, Ltd. Electron beam lithography apparatus having device for correcting beam shape
US7485879B2 (en) 2005-07-04 2009-02-03 Nuflare Technology, Inc. Electron beam writing apparatus and writing method
DE102006030837B4 (en) * 2005-07-04 2013-03-07 Nuflare Technology, Inc. Electron beam writing method

Also Published As

Publication number Publication date
JPS5759660B2 (en) 1982-12-15

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