JPS5632726A - Method for electron beam lithography - Google Patents
Method for electron beam lithographyInfo
- Publication number
- JPS5632726A JPS5632726A JP10790579A JP10790579A JPS5632726A JP S5632726 A JPS5632726 A JP S5632726A JP 10790579 A JP10790579 A JP 10790579A JP 10790579 A JP10790579 A JP 10790579A JP S5632726 A JPS5632726 A JP S5632726A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- electron
- sectional area
- specimen
- cross sectional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To perform highly accurate exposure by varying the cross-sectional area of an electron beam and the electron-beam current density so that the product of the varied cross sectional area of the electron beam and the electron-beam current density on a specimen is approximately constant, and keeping the electron-beam current in the vicinity of the optimum focus. CONSTITUTION:The cross-sectional area of an electron beam is formed so as to have a magnitude corresponding to a pattern Q1 by using masks M1 and M2, a lens 3 between both masks, and a pair of deflectors 5, depending on the command from an electronic computer 4. In this case, a bias power supply S2 is controlled by the command 4, and an electron-beam densiy on a specimen 7 is set at D1. Furthermore, the excitation of a lens 6 is controlled 4 so that the electron beam is focused on the specimen 7 at a current value corresponding to the product of the cross sectional area of the electron beam and D1, and the pattern Q1 is described. Thereafter, the electron beam density is varied in response to the cross sectional area of the electron beam, and the beam is projected so that the product of the cross sectional area and the electron beam current density on the specimen is always kept approximately constant. In this constitution, since the electron beam having almost no blur is projected on the specimen without the readjustment of the projection lens 6, image description can be performed at a constant resolution, and the resusltant highly accurate exposure can be accomplished.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10790579A JPS5632726A (en) | 1979-08-24 | 1979-08-24 | Method for electron beam lithography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10790579A JPS5632726A (en) | 1979-08-24 | 1979-08-24 | Method for electron beam lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5632726A true JPS5632726A (en) | 1981-04-02 |
JPS5759660B2 JPS5759660B2 (en) | 1982-12-15 |
Family
ID=14471030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10790579A Granted JPS5632726A (en) | 1979-08-24 | 1979-08-24 | Method for electron beam lithography |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5632726A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5130550A (en) * | 1989-10-23 | 1992-07-14 | Hitachi, Ltd. | Electron beam lithography apparatus having device for correcting beam shape |
US7485879B2 (en) | 2005-07-04 | 2009-02-03 | Nuflare Technology, Inc. | Electron beam writing apparatus and writing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012224537A1 (en) | 2012-12-31 | 2014-07-03 | Technische Universität Ilmenau | Lithographic process and lithographic device for components and circuits with micro and nano structure dimensions |
-
1979
- 1979-08-24 JP JP10790579A patent/JPS5632726A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5130550A (en) * | 1989-10-23 | 1992-07-14 | Hitachi, Ltd. | Electron beam lithography apparatus having device for correcting beam shape |
US7485879B2 (en) | 2005-07-04 | 2009-02-03 | Nuflare Technology, Inc. | Electron beam writing apparatus and writing method |
DE102006030837B4 (en) * | 2005-07-04 | 2013-03-07 | Nuflare Technology, Inc. | Electron beam writing method |
Also Published As
Publication number | Publication date |
---|---|
JPS5759660B2 (en) | 1982-12-15 |
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