JPH06140309A - Method for electron beam expoure - Google Patents

Abstract

PURPOSE:To provide a correction means to obtain highly accurate a pattern in electron beam exposure. CONSTITUTION:This method relates to the formation of a resist pattern 3 on the resist film on a substrate 1 by electron beam irradiation using an electron beam exposure system. The electron beam exposure system is provided with a correcting unit 4, and is so constituted that the size of an electron beam 2 is varied according to the deflection position 6 in the deflection field of the beam 2. This transfers a pattern 3 in true width.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam exposure apparatus, and more particularly to a correction mechanism for forming a highly accurate pattern.

In recent years, with the high integration and miniaturization of semiconductor devices, extremely fine and highly accurate patterns are required for patterns formed using an electron beam exposure apparatus, and accordingly, in pattern formation during electron beam exposure. The correction mechanism also requires advanced techniques.

[0003]

2. Description of the Related Art In conventional electron beam exposure, in order to flatten the size distribution in the deflection field, a mechanism such as dynamic focus (focus adjustment) or dynamic stig (aberration adjustment) using an electrostatic magnetic field is used. To correct the aberration and solve the problem.

[0004]

However, in the present situation for the purpose of forming a pattern with higher accuracy, it is necessary to flatten the pattern size in the deflection field to improve the aberration of the electron optical meter as in the prior art. It is becoming difficult just to correct it.

In view of the above problems, the present invention is provided for the purpose of obtaining a more powerful correction means for obtaining a highly accurate pattern during electron beam exposure.

[0006]

FIG. 1 is an explanatory view of the principle of the present invention, and FIG. 1 (a) is an explanatory view of a resist pattern, FIG.
(B) shows a schematic sectional view of the electron beam exposure apparatus of the present invention.

In the figure, 1 is a substrate, 2 is an electron beam,
3 is a resist pattern, 4 is a correction unit, 5 is a deflection field, 6 is a deflection position, 7 is an electron gun, 8 is a first slit, 9 is a slit deflector, 10 is a second slit, and 11 is a main deflector.

In the present invention, as a means for solving the problem, FIG.
A correction unit 4 for the resist pattern 3 as shown in (b) is provided. That is, in the variable rectangular shaped beam electron beam exposure apparatus, since the beam size of the electron beam 3 can be adjusted by the voltage applied to the slit deflector 9, it follows the deflection position 6 of the resist pattern 3 in the deflection field 5. If the correction voltage is applied, the size distribution of the resist pattern 3 in the deflection field 5 can be made more flat.

The principle of the present invention is shown in FIG. 1A. First, as shown in the left diagram of FIG.
Assuming that the resist pattern 3 in the upper right part of the figure shows a tendency to decrease in size and the pattern width is narrower than the design value as compared with the resist pattern 3 in other parts, the main deflector 11 worked in the upper right part. At this time, the voltage of the slit deflector 9 is adjusted to increase the beam size of the electron beam 2 to generate a relatively large rectangle for resist pattern drawing. Then, by exposing only the resist pattern in the upper right portion with a large electron beam 2, a resist pattern 3 having the same dimensions as the other portions can be formed as shown in the right diagram of FIG. 1A.

That is, as shown in FIG. 1, an object of the present invention is to provide a correction unit 4 in an electron beam exposure apparatus when a resist film on a substrate 1 is irradiated with an electron beam 2 to form a resist pattern 3. , By changing the beam size of the electron beam 2 according to the deflection position 6 in the deflection field 5 of the electron beam 2 so that the resist pattern 3 is exposed with a regular width. To be achieved.

[0011]

According to the present invention, the drawing data of the resist pattern on the mask substrate or the wafer is inspected, and if the resist pattern in the deflection field has a resist pattern having a dimension deviated from the normal design value, the resist pattern is The deflection position (drawing position) and the pattern width are detected, the numerical coordinates are input to the correction unit, the voltage of the slit deflector is adjusted, and the exposure beam of the pattern of the deflection position is automatically adjusted during electron beam exposure. Change the size.

As a result, all the resist patterns are formed to have regular widths.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 is a correction unit of the present invention, and FIG. 3 is an explanatory diagram of arithmetic processing. An embodiment of the present invention will be described with reference to FIGS.

Reference numeral 4 is a correction unit, 6 is a deflection position, 12 is a memory map, and 13 is an arithmetic circuit. As means for solving the problem, in the present invention, in the electron beam exposure apparatus provided with the correction unit 4 for the resist pattern as shown in FIG. 1B, the electron beam 2 emitted from the electron gun 7 has the first slit. The shot size of the electron beam 2 when passing through the second slit 10 is controlled by the deflection by the slit deflector 9 after passing through 8.

Since the electron beam 2 is deflected by the main deflector 11 so as to be incident on the target deflection position 6 in the deflection field 5, the deflection position 6 is input to the correction unit 4 to change the shot size of the electron beam 2. If the correction amount is added in the slit deflector 9, the main deflector 11
The shot size of the electron beam 2 is corrected when the substrate 1 is irradiated with the electron beam 2 after passing through.

An embodiment of the correction unit 4 is shown in FIG. That is, as shown in FIG. 2, the correction values D _{0 to} D ₃ corresponding to the four grid intersections including the input value 2a.
Enters the arithmetic circuit 13 of 2c from the memory map 12.

On the other hand, the input value of 2a also directly enters the arithmetic circuit 13 of 2c, is subjected to arithmetic processing as shown in FIG.
Outputs X and Y. The calculation process is performed as shown in FIG.
_{0 to} D ₃ are correction values of (X ₀ , Y ₀ ) to (X ₁ , Y ₁ ),
If X ₁ -X ₀ is the X grid size and Y 1 -Y ₀ is the Y grid size, then any X (X ₀ ≦ X <X ₁ ),
The correction value D for Y (Y ₀ ≦ Y <Y ₁ ) is It can be obtained by the formula.

[0018]

According to the present invention, by reducing the non-uniform tendency of the dimensional distribution of the resist pattern in the deflection field, it becomes possible to form a highly accurate mask substrate or a resist pattern on a wafer. It is possible to meet the demand for high integration required for manufacturing.

[Brief description of drawings]

FIG. 1 is an explanatory view of the principle of the present invention.

FIG. 2 is a correction unit of the present invention.

FIG. 3 is an explanatory diagram of arithmetic processing

[Explanation of symbols]

 1 substrate 2 electron beam 3 resist pattern 4 correction unit 5 deflection field 6 deflection position 7 electron gun 8 first slit 9 slit deflector 10 second slit 11 main deflector 12 memory map 13 arithmetic circuit

Claims (1)

[Claims] 1. A substrate (1) using an electron beam exposure apparatus.
When irradiating the upper resist film with an electron beam (2) to form a resist pattern (3), the electron beam exposure device is equipped with a correction unit (4), and the resist pattern (3) is exposed in a regular width. To be,
Deflection position in the deflection field (5) of the electron beam (2)
According to (6), the electron beam exposure method is characterized in that the beam size of the electron beam (2) is changed for exposure.