JPS631741B2 - - Google Patents

Info

Publication number
JPS631741B2
JPS631741B2 JP55122854A JP12285480A JPS631741B2 JP S631741 B2 JPS631741 B2 JP S631741B2 JP 55122854 A JP55122854 A JP 55122854A JP 12285480 A JP12285480 A JP 12285480A JP S631741 B2 JPS631741 B2 JP S631741B2
Authority
JP
Japan
Prior art keywords
electron beam
signal
exposed
irradiation position
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55122854A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5748230A (en
Inventor
Eiji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP12285480A priority Critical patent/JPS5748230A/ja
Publication of JPS5748230A publication Critical patent/JPS5748230A/ja
Publication of JPS631741B2 publication Critical patent/JPS631741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
JP12285480A 1980-09-04 1980-09-04 Electron ray exposure Granted JPS5748230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12285480A JPS5748230A (en) 1980-09-04 1980-09-04 Electron ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12285480A JPS5748230A (en) 1980-09-04 1980-09-04 Electron ray exposure

Publications (2)

Publication Number Publication Date
JPS5748230A JPS5748230A (en) 1982-03-19
JPS631741B2 true JPS631741B2 (enrdf_load_stackoverflow) 1988-01-13

Family

ID=14846280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12285480A Granted JPS5748230A (en) 1980-09-04 1980-09-04 Electron ray exposure

Country Status (1)

Country Link
JP (1) JPS5748230A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130121A (ja) * 1983-12-16 1985-07-11 Toshiba Mach Co Ltd 電子ビ−ム露光方法
JP6174862B2 (ja) * 2013-01-18 2017-08-02 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法および荷電粒子ビーム描画装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607380B2 (ja) * 1976-11-09 1985-02-23 富士通株式会社 電子ビーム露光装置
JPS52120686A (en) * 1977-04-21 1977-10-11 Jeol Ltd Electronic ray exposure method
JPS5572033A (en) * 1978-11-27 1980-05-30 Toshiba Corp Electron beam exposure device

Also Published As

Publication number Publication date
JPS5748230A (en) 1982-03-19

Similar Documents

Publication Publication Date Title
US4151422A (en) Electron beam exposure method
DE2516390A1 (de) Verfahren und vorrichtung zum herstellen mikrominiaturisierter bauelemente
JP3310400B2 (ja) 電子ビーム露光方法および露光装置
US4167676A (en) Variable-spot scanning in an electron beam exposure system
JPS631741B2 (enrdf_load_stackoverflow)
EP0153864B1 (en) A method of electron beam exposure
JP2002260982A (ja) 可変面積型電子ビーム描画装置を用いた描画方法
JPS6292434A (ja) 電子ビ−ム露光装置
JP2005302868A (ja) 電子ビーム描画方法および装置
JPS62149126A (ja) 荷電ビ−ム露光方法
JP3607989B2 (ja) 荷電粒子線転写装置
JPH02278711A (ja) 微細パターンの形成方法
JPH048938B2 (enrdf_load_stackoverflow)
JPS62172724A (ja) 荷電ビ−ム露光方法
JPH04309213A (ja) 荷電ビーム描画方法
JPH0574690A (ja) 電子ビーム描画方法
JPS6091636A (ja) 電子ビ−ム描画装置
JPH04309214A (ja) 電子ビーム露光装置
JPS5831728B2 (ja) 電子線露光方法
JPH03104112A (ja) 電子ビーム露光装置
JPS62229941A (ja) 荷電ビ−ム露光方法
JPS62156816A (ja) パタ−ン描画方法
JPH10242025A (ja) 可変面積型電子ビーム描画方法
JPS60244026A (ja) 電子線露光方法
JPS62242329A (ja) 荷電ビ−ム描画装置