JPS5457969A - Electric field effect transistor - Google Patents

Electric field effect transistor

Info

Publication number
JPS5457969A
JPS5457969A JP12482577A JP12482577A JPS5457969A JP S5457969 A JPS5457969 A JP S5457969A JP 12482577 A JP12482577 A JP 12482577A JP 12482577 A JP12482577 A JP 12482577A JP S5457969 A JPS5457969 A JP S5457969A
Authority
JP
Japan
Prior art keywords
layer
layers
film
selectively
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12482577A
Other languages
English (en)
Inventor
Seiichi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12482577A priority Critical patent/JPS5457969A/ja
Publication of JPS5457969A publication Critical patent/JPS5457969A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP12482577A 1977-10-18 1977-10-18 Electric field effect transistor Pending JPS5457969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12482577A JPS5457969A (en) 1977-10-18 1977-10-18 Electric field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12482577A JPS5457969A (en) 1977-10-18 1977-10-18 Electric field effect transistor

Publications (1)

Publication Number Publication Date
JPS5457969A true JPS5457969A (en) 1979-05-10

Family

ID=14895029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12482577A Pending JPS5457969A (en) 1977-10-18 1977-10-18 Electric field effect transistor

Country Status (1)

Country Link
JP (1) JPS5457969A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691470A (en) * 1979-12-25 1981-07-24 Toshiba Corp Semiconductor
JPS57128980A (en) * 1980-12-19 1982-08-10 Philips Nv Schottky barrier field effect transistor
JPS58119674A (ja) * 1982-01-11 1983-07-16 Nippon Telegr & Teleph Corp <Ntt> シヨツトキ−バリアゲ−ト電界効果トランジスタ
WO2006077674A1 (ja) * 2005-01-24 2006-07-27 Sumitomo Electric Industries, Ltd. 接合型電界効果トランジスタ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691470A (en) * 1979-12-25 1981-07-24 Toshiba Corp Semiconductor
JPS57128980A (en) * 1980-12-19 1982-08-10 Philips Nv Schottky barrier field effect transistor
JPH0137857B2 (ja) * 1980-12-19 1989-08-09 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS58119674A (ja) * 1982-01-11 1983-07-16 Nippon Telegr & Teleph Corp <Ntt> シヨツトキ−バリアゲ−ト電界効果トランジスタ
WO2006077674A1 (ja) * 2005-01-24 2006-07-27 Sumitomo Electric Industries, Ltd. 接合型電界効果トランジスタ
JP2006203119A (ja) * 2005-01-24 2006-08-03 Sumitomo Electric Ind Ltd 接合型電界効果トランジスタ
JP4586547B2 (ja) * 2005-01-24 2010-11-24 住友電気工業株式会社 接合型電界効果トランジスタ

Similar Documents

Publication Publication Date Title
US4656493A (en) Bidirectional, high-speed power MOSFET devices with deep level recombination centers in base region
JPS5638867A (en) Insulated gate type field effect transistor
JPS5595370A (en) Compound semiconductor field-effect transistor
JPS5457969A (en) Electric field effect transistor
JPS562672A (en) Schottky barrier diode
JPS54106176A (en) Field effect switching element
JPS62150769A (ja) 半導体装置
JPS6424467A (en) Field effect transistor
JPS5598868A (en) Insulated gate type field effect semiconductor device
JPS5543872A (en) Insulating gate field effect transistor
JPH04180680A (ja) 絶縁ゲート型バイポーラトランジスタおよびその製造方法
KR970053039A (ko) 반도체 소자와 그의 제조방법
JPS63122277A (ja) 縦型ｍｏｓｆｅｔ
JPH01286367A (ja) 縦型電界効果トランジスタ
JPS55115368A (en) Junction type field-effect transistor
JPH0472670A (ja) 絶縁ゲート型バイポーラトランジスタ
KR950026031A (ko) 전력용 반도체 장치 및 그 제조방법
JPS564279A (en) Insulated gate type field effect transistor
JPS5466078A (en) Composite field effect transistor
JPS61168254A (ja) 高耐圧ｍｏｓ電界効果半導体装置
JPS54129984A (en) Manufacture of semiconductor device
JPS57121271A (en) Field effect transistor
JPS564280A (en) Insulated gate type field effect transistor
JPS5572079A (en) Production of semiconductor device
JPS6428926A (en) Semiconductor device