JP2006203119A - 接合型電界効果トランジスタ - Google Patents
接合型電界効果トランジスタ Download PDFInfo
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- JP2006203119A JP2006203119A JP2005015395A JP2005015395A JP2006203119A JP 2006203119 A JP2006203119 A JP 2006203119A JP 2005015395 A JP2005015395 A JP 2005015395A JP 2005015395 A JP2005015395 A JP 2005015395A JP 2006203119 A JP2006203119 A JP 2006203119A
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- 230000005669 field effect Effects 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 149
- 239000012535 impurity Substances 0.000 claims description 60
- 150000002500 ions Chemical class 0.000 claims description 38
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000969 carrier Substances 0.000 description 20
- 238000002513 implantation Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Abstract
【解決手段】 接合型電界効果トランジスタ20は、チャネル領域を有するn型の半導体層1と、チャネル領域の上に形成された緩衝層3と、緩衝層3の上に形成されたp+領域4a,4bとを備えている。緩衝層3における電子の濃度は、半導体層1における電子の濃度よりも低い。緩衝層3における電子の濃度は、半導体層1における電子の濃度の10分の1以下であることが好ましい。
【選択図】 図1
Description
図1は、本発明の実施の形態1における接合型電界効果トランジスタの構成を示す断面図である。図1に示すように、本実施の形態の接合型電界効果トランジスタ20は、半導体基板6と、n型エピタキシャル層7と、第1導電型の半導体層としてのn型の半導体層1と、緩衝層3と、第2導電型の半導体層としてのp+埋め込み層5a,5bと、第2導電型の不純物領域としてのp+領域4a,4bと、n+領域8a,8bと、p+領域9a,9bと、ゲート電極11a,11bと、ソース電極13a,13bと、ドレイン電極15とを備えている。
図3は、本発明の実施の形態2における接合型電界効果トランジスタの構成を示す断面図である。図3に示すように本実施の形態の接合型電界効果トランジスタ20aは、他の緩衝層としての緩衝層18をさらに備えている。緩衝層18は、半導体層1のチャネル領域の下であってp+埋め込み層5a,5bの上に形成されている。緩衝層18における電子の濃度は、半導体層1における電子の濃度よりも低くなっている。緩衝層18における電子の濃度は、半導体層1における電子の濃度の10分の1以下である。また、p+埋め込み層5a,5bの各々は不純物イオンを注入することで形成されている。
図5は、本発明の実施の形態3における接合型電界効果トランジスタの構成を示す断面図である。図5に示すように、本実施の形態の接合型電界効果トランジスタ21は、RESURF(reduced surface)構造を有しており、以下の点で実施の形態1の接合型電界効果トランジスタ20と異なっている。
Claims (9)
- チャネル領域を有する第1導電型の半導体層と、
前記チャネル領域の上に形成された緩衝層と、
前記緩衝層の上に形成された第2導電型の不純物領域とを備え、
前記緩衝層における第1導電型のキャリア濃度は、前記第1導電型の半導体層における第1導電型のキャリア濃度よりも低い、接合型電界効果トランジスタ。 - 前記緩衝層における前記第1導電型のキャリア濃度は、前記第1導電型の半導体層における前記第1導電型のキャリア濃度の10分の1以下である、請求項1に記載の接合型電界効果トランジスタ。
- 前記第1導電型の半導体層は炭化ケイ素よりなる、請求項1または2に記載の接合型電界効果トランジスタ。
- 前記チャネル領域の下に形成された第2導電型の半導体層をさらに備える、請求項1〜3のいずれかに記載の接合型電界効果トランジスタ。
- 前記第2導電型の半導体層は不純物イオンを注入することで形成されており、
前記チャネル領域の下であって前記第2導電型の半導体層の上に形成された他の緩衝層をさらに備え、
前記他の緩衝層における第1導電型のキャリア濃度は、前記第1導電型の半導体層における第1導電型のキャリア濃度よりも低い、請求項4に記載の接合型電界効果トランジスタ。 - 前記他の緩衝層における前記第1導電型のキャリア濃度は、前記第1導電型の半導体層における前記第1導電型のキャリア濃度の10分の1以下である、請求項5に記載の接合型電界効果トランジスタ。
- n型炭化ケイ素よりなる半導体基板をさらに備え、
前記第1導電型の半導体層は前記半導体基板の一方の主表面上に形成されている、請求項1〜6のいずれかに記載の接合型電界効果トランジスタ。 - 前記第2導電型の不純物領域の表面上に形成されたゲート電極と、
前記第1導電型の半導体層の表面上に形成されたソース/ドレイン電極のうちいずれか一方の電極と、
前記半導体基板の他方の主表面上に形成されたソース/ドレイン電極のうちいずれか他方の電極とをさらに備える、請求項7に記載の接合型電界効果トランジスタ。 - 前記第2導電型の不純物領域の表面上に形成されたゲート電極と、
前記第1導電型の半導体層の表面上に形成されたソース電極およびドレイン電極をさらに備える、請求項7に記載の接合型電界効果トランジスタ。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005015395A JP4586547B2 (ja) | 2005-01-24 | 2005-01-24 | 接合型電界効果トランジスタ |
PCT/JP2005/016481 WO2006077674A1 (ja) | 2005-01-24 | 2005-09-08 | 接合型電界効果トランジスタ |
CNB2005800028063A CN100470741C (zh) | 2005-01-24 | 2005-09-08 | 结型场效应晶体管 |
US10/583,501 US20090152566A1 (en) | 2005-01-24 | 2005-09-08 | Junction field-effect transistor |
CA002547692A CA2547692A1 (en) | 2005-01-24 | 2005-09-08 | Junction field-effect transistor |
EP05782096.1A EP1783826B1 (en) | 2005-01-24 | 2005-09-08 | Junction field-effect transistor |
TW094132839A TW200627551A (en) | 2005-01-24 | 2005-09-22 | Junction field effect transistor |
KR1020067013910A KR101096882B1 (ko) | 2005-01-24 | 2006-07-11 | 접합형 전계 효과 트랜지스터 |
US13/281,901 US20120037924A1 (en) | 2005-01-24 | 2011-10-26 | Junction Field-Effect Transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005015395A JP4586547B2 (ja) | 2005-01-24 | 2005-01-24 | 接合型電界効果トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006203119A true JP2006203119A (ja) | 2006-08-03 |
JP4586547B2 JP4586547B2 (ja) | 2010-11-24 |
Family
ID=36692069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005015395A Expired - Fee Related JP4586547B2 (ja) | 2005-01-24 | 2005-01-24 | 接合型電界効果トランジスタ |
Country Status (8)
Country | Link |
---|---|
US (2) | US20090152566A1 (ja) |
EP (1) | EP1783826B1 (ja) |
JP (1) | JP4586547B2 (ja) |
KR (1) | KR101096882B1 (ja) |
CN (1) | CN100470741C (ja) |
CA (1) | CA2547692A1 (ja) |
TW (1) | TW200627551A (ja) |
WO (1) | WO2006077674A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014221711A (ja) * | 2006-09-14 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | マイクロパイプ・フリーの炭化ケイ素およびその製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5452062B2 (ja) * | 2009-04-08 | 2014-03-26 | 三菱電機株式会社 | 炭化珪素半導体装置の製造方法 |
CN102136427A (zh) * | 2010-12-24 | 2011-07-27 | 苏州华芯微电子股份有限公司 | 有效的实现低阈值电压mos器件的方法 |
US10396215B2 (en) | 2015-03-10 | 2019-08-27 | United Silicon Carbide, Inc. | Trench vertical JFET with improved threshold voltage control |
US20160268446A1 (en) * | 2015-03-10 | 2016-09-15 | United Silicon Carbide, Inc. | Trench vertical jfet with improved threshold voltage control |
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2005
- 2005-01-24 JP JP2005015395A patent/JP4586547B2/ja not_active Expired - Fee Related
- 2005-09-08 US US10/583,501 patent/US20090152566A1/en not_active Abandoned
- 2005-09-08 CN CNB2005800028063A patent/CN100470741C/zh not_active Expired - Fee Related
- 2005-09-08 CA CA002547692A patent/CA2547692A1/en not_active Abandoned
- 2005-09-08 WO PCT/JP2005/016481 patent/WO2006077674A1/ja active Application Filing
- 2005-09-08 EP EP05782096.1A patent/EP1783826B1/en not_active Not-in-force
- 2005-09-22 TW TW094132839A patent/TW200627551A/zh unknown
-
2006
- 2006-07-11 KR KR1020067013910A patent/KR101096882B1/ko not_active IP Right Cessation
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2011
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JP2014221711A (ja) * | 2006-09-14 | 2014-11-27 | クリー インコーポレイテッドCree Inc. | マイクロパイプ・フリーの炭化ケイ素およびその製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
TW200627551A (en) | 2006-08-01 |
EP1783826A4 (en) | 2009-07-08 |
CA2547692A1 (en) | 2006-07-24 |
CN1910741A (zh) | 2007-02-07 |
JP4586547B2 (ja) | 2010-11-24 |
EP1783826A1 (en) | 2007-05-09 |
US20090152566A1 (en) | 2009-06-18 |
CN100470741C (zh) | 2009-03-18 |
KR101096882B1 (ko) | 2011-12-22 |
EP1783826B1 (en) | 2016-11-30 |
US20120037924A1 (en) | 2012-02-16 |
WO2006077674A1 (ja) | 2006-07-27 |
KR20070103284A (ko) | 2007-10-23 |
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