JPS5448182A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5448182A JPS5448182A JP11486277A JP11486277A JPS5448182A JP S5448182 A JPS5448182 A JP S5448182A JP 11486277 A JP11486277 A JP 11486277A JP 11486277 A JP11486277 A JP 11486277A JP S5448182 A JPS5448182 A JP S5448182A
- Authority
- JP
- Japan
- Prior art keywords
- poly
- wiring
- phosphorus
- crystal silicon
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11486277A JPS5448182A (en) | 1977-09-22 | 1977-09-22 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11486277A JPS5448182A (en) | 1977-09-22 | 1977-09-22 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5448182A true JPS5448182A (en) | 1979-04-16 |
| JPS6124827B2 JPS6124827B2 (enrdf_load_stackoverflow) | 1986-06-12 |
Family
ID=14648551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11486277A Granted JPS5448182A (en) | 1977-09-22 | 1977-09-22 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5448182A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS568864A (en) * | 1979-07-02 | 1981-01-29 | Nec Corp | Semiconductor device |
| JPS6071153U (ja) * | 1983-10-20 | 1985-05-20 | 新日本無線株式会社 | 半導体装置 |
-
1977
- 1977-09-22 JP JP11486277A patent/JPS5448182A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS568864A (en) * | 1979-07-02 | 1981-01-29 | Nec Corp | Semiconductor device |
| JPS6071153U (ja) * | 1983-10-20 | 1985-05-20 | 新日本無線株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6124827B2 (enrdf_load_stackoverflow) | 1986-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5727070A (en) | Mos type semiconductor device | |
| JPS5483386A (en) | Semiconductor device | |
| JPS54161894A (en) | Manufacture of semiconductor device | |
| JPS5660063A (en) | Manufacture of semiconductor device | |
| JPS5448182A (en) | Semiconductor integrated circuit device | |
| JPS56110264A (en) | High withstand voltage mos transistor | |
| JPS56125875A (en) | Semiconductor integrated circuit device | |
| JPS5448179A (en) | Mis-type semiconductor integrated circuit device | |
| JPS5679472A (en) | Preparing method of mos-type semiconductor device | |
| JPS54114081A (en) | Semiconductor integrated circuit device | |
| JPS54101294A (en) | Dummy mos semiconductor device | |
| JPS54104782A (en) | Mos type semiconductor device | |
| JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
| JPS5591827A (en) | Production of semiconductor device | |
| JPS5552262A (en) | Mos semiconductor device | |
| JPS568849A (en) | Manufacture of semiconductor integrated circuit | |
| JPS57132352A (en) | Complementary type metal oxide semiconductor integrated circuit device | |
| JPS5457881A (en) | Semiconductor device | |
| JPS5789253A (en) | Semiconductor device | |
| JPS54134579A (en) | Mis semiconductor device | |
| JPS5518072A (en) | Mos semiconductor device | |
| JPS5721865A (en) | Manufacture of semiconductor device | |
| JPS566464A (en) | Semiconductor device and manufacture thereof | |
| JPS561572A (en) | Manufacture of semiconductor device | |
| JPS56133869A (en) | Mos type semiconductor device and manufacture thereof |