JPS568864A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS568864A
JPS568864A JP8358779A JP8358779A JPS568864A JP S568864 A JPS568864 A JP S568864A JP 8358779 A JP8358779 A JP 8358779A JP 8358779 A JP8358779 A JP 8358779A JP S568864 A JPS568864 A JP S568864A
Authority
JP
Japan
Prior art keywords
resistance
monocrystal
polycrystal
resistance value
integration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8358779A
Other languages
Japanese (ja)
Inventor
Soichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8358779A priority Critical patent/JPS568864A/en
Publication of JPS568864A publication Critical patent/JPS568864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To remarkably improve element integration without impairing the performance with respect to the precision of resistance value which is requested as an intergrated circuit by using properly two kinds of resistance elements i.e. monocrystal and polycrystal. CONSTITUTION:There exist difficulties in improving element integration for monocrystal resistance. For example, the addition of P-type impurity to an N epitaxial layer is simultaneously conducted with the P base formation of transistor, the resistance value of base layer will not optionally be selected in order to minimize the configuration of resistance elements. Furthermore, the formation of the connection part with an insulating region or wires is required. Polycrystal resistance is extremely effective for the improvement of element integration. However, the precision of resistance value and that of resistance ratio vary widely by product lot as compared to monocrystal resistance. Monocrystal resistance is preferable for limiting the characteristics with respect to the resistance value within the tolerance range. Therefore, layout is easy, integration is improved and related performance is not deteriorated by using polycrystal resistance for internal logic circuits and monocrystal resistance for output logic circuits on semiconductor substrates forming large scale logic ICs.
JP8358779A 1979-07-02 1979-07-02 Semiconductor device Pending JPS568864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8358779A JPS568864A (en) 1979-07-02 1979-07-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8358779A JPS568864A (en) 1979-07-02 1979-07-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS568864A true JPS568864A (en) 1981-01-29

Family

ID=13806618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8358779A Pending JPS568864A (en) 1979-07-02 1979-07-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS568864A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170136516A (en) 2016-05-06 2017-12-11 나가세 상교오 가부시키가이샤 Paint device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503793A (en) * 1973-05-15 1975-01-16
JPS5448182A (en) * 1977-09-22 1979-04-16 Nec Corp Semiconductor integrated circuit device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503793A (en) * 1973-05-15 1975-01-16
JPS5448182A (en) * 1977-09-22 1979-04-16 Nec Corp Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170136516A (en) 2016-05-06 2017-12-11 나가세 상교오 가부시키가이샤 Paint device

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