JPS5447493A - Semiconductor integrated circuit device and production of the same - Google Patents

Semiconductor integrated circuit device and production of the same

Info

Publication number
JPS5447493A
JPS5447493A JP11269577A JP11269577A JPS5447493A JP S5447493 A JPS5447493 A JP S5447493A JP 11269577 A JP11269577 A JP 11269577A JP 11269577 A JP11269577 A JP 11269577A JP S5447493 A JPS5447493 A JP S5447493A
Authority
JP
Japan
Prior art keywords
layer
layers
epitaxial
dielectric strength
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11269577A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138619B2 (enrdf_load_stackoverflow
Inventor
Kaoru Niino
Takanori Nishimura
Kenji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11269577A priority Critical patent/JPS5447493A/ja
Publication of JPS5447493A publication Critical patent/JPS5447493A/ja
Publication of JPS6138619B2 publication Critical patent/JPS6138619B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP11269577A 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same Granted JPS5447493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11269577A JPS5447493A (en) 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11269577A JPS5447493A (en) 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same

Publications (2)

Publication Number Publication Date
JPS5447493A true JPS5447493A (en) 1979-04-14
JPS6138619B2 JPS6138619B2 (enrdf_load_stackoverflow) 1986-08-30

Family

ID=14593164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11269577A Granted JPS5447493A (en) 1977-09-21 1977-09-21 Semiconductor integrated circuit device and production of the same

Country Status (1)

Country Link
JP (1) JPS5447493A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139962A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 半導体装置の製造方法
US4950616A (en) * 1988-07-13 1990-08-21 Samsung Electronics Co., Ltd. Method for fabricating a BiCMOS device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4950616A (en) * 1988-07-13 1990-08-21 Samsung Electronics Co., Ltd. Method for fabricating a BiCMOS device
JPH02139962A (ja) * 1988-11-21 1990-05-29 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6138619B2 (enrdf_load_stackoverflow) 1986-08-30

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